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The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)
The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)
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The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

Wang, Huimin ; Wei, Donghai ; Duan, Junfei ; Qin, Zhenzhen ; Qin, Guangzhao ; Yao, Yagang ; Hu, Ming

Nanotechnology, 2021-03, Vol.32 (13), p.135401-135401 [Periódico revisado por pares]

England: IOP Publishing

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2
Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer
Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer
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Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer

Philipps, J M ; Müntze, G M ; Hille, P ; Wallys, J ; Schörmann, J ; Teubert, J ; Hofmann, D M ; Eickhoff, M

Nanotechnology, 2013-08, Vol.24 (32), p.325701-325701 [Periódico revisado por pares]

Bristol: IOP Publishing

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3
Quantum confinement effects in gallium nitride nanostructures: ab initio investigations
Quantum confinement effects in gallium nitride nanostructures: ab initio investigations
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Quantum confinement effects in gallium nitride nanostructures: ab initio investigations

Carter, Damien J ; Puckeridge, Max ; Delley, Bernard ; Stampfl, Catherine

Nanotechnology, 2009-10, Vol.20 (42), p.425401-425401 [Periódico revisado por pares]

England: IOP Publishing

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4
Gallium nitride heterostructures on 3D structured silicon
Gallium nitride heterostructures on 3D structured silicon
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Gallium nitride heterostructures on 3D structured silicon

Fündling, Sönke ; Sökmen, Ünsal ; Peiner, Erwin ; Weimann, Thomas ; Hinze, Peter ; Jahn, Uwe ; Trampert, Achim ; Riechert, Henning ; Bakin, Andrey ; Wehmann, Hergo-Heinrich ; Waag, Andreas

Nanotechnology, 2008-10, Vol.19 (40), p.405301-405301 [Periódico revisado por pares]

England: IOP Publishing

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5
Phase-coherent transport in trigonal gallium nitride nanowires
Phase-coherent transport in trigonal gallium nitride nanowires
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Phase-coherent transport in trigonal gallium nitride nanowires

Park, Tae-Eon ; Min, Byoung-Chul ; Lee, Jaejun ; Jeon, Jeehoon ; Lee, Ki-Young ; Choi, Heon-Jin ; Chang, Joonyeon

Nanotechnology, 2021-03, Vol.32 (12), p.125702-125702 [Periódico revisado por pares]

England: IOP Publishing

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6
All-solution-processed perovskite/gallium nitride particles hybrid visible-blind ultraviolet photodetectors
All-solution-processed perovskite/gallium nitride particles hybrid visible-blind ultraviolet photodetectors
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All-solution-processed perovskite/gallium nitride particles hybrid visible-blind ultraviolet photodetectors

He, Jing ; Jiang, Sijie ; Lu, Lihua ; Li, Wenfeng ; Zhang, Jing ; Wei, Wenjie ; Guo, Zhongli ; Hu, Beier ; Wan, Ziang ; Yun, Yikai ; Tian, Yuanyuan ; Huang, Kai ; Chen, Mengyu ; Li, Cheng

Nanotechnology, 2023-07, Vol.34 (31), p.315202 [Periódico revisado por pares]

England: IOP Publishing

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7
Fatigue and its effect on the piezopotential properties of gallium nitride nanowires
Fatigue and its effect on the piezopotential properties of gallium nitride nanowires
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Fatigue and its effect on the piezopotential properties of gallium nitride nanowires

Zhang, Jin ; Du, Yao

Nanotechnology, 2022-02, Vol.33 (9), p.95401 [Periódico revisado por pares]

IOP Publishing

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8
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
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Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

Nguyen, Hieu Pham Trung ; Cui, Kai ; Zhang, Shaofei ; Fathololoumi, Saeed ; Mi, Zetian

Nanotechnology, 2011-11, Vol.22 (44), p.445202-1-5 [Periódico revisado por pares]

England: IOP Publishing

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9
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells
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Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

Bergbauer, W ; Strassburg, M ; Kölper, Ch ; Linder, N ; Roder, C ; Lähnemann, J ; Trampert, A ; Fündling, S ; Li, S F ; Wehmann, H-H ; Waag, A

Nanotechnology, 2010-07, Vol.21 (30), p.305201-305201 [Periódico revisado por pares]

England: IOP Publishing

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10
Field emission enhancement from patterned gallium nitride nanowires
Field emission enhancement from patterned gallium nitride nanowires
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Field emission enhancement from patterned gallium nitride nanowires

Ng, D K T ; Hong, M H ; Tan, L S ; Zhu, Y W ; Sow, C H

Nanotechnology, 2007-09, Vol.18 (37), p.375707-375707 (5) [Periódico revisado por pares]

IOP Publishing

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