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Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride
Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride
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Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium Nitride

Wu, Xufei ; Lee, Jonghoon ; Varshney, Vikas ; Wohlwend, Jennifer L ; Roy, Ajit K ; Luo, Tengfei

Scientific reports, 2016-03, Vol.6 (1), p.22504-22504, Article 22504 [Periódico revisado por pares]

England: Nature Publishing Group

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2
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication
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In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Yang, Yannan ; Fan, Rong ; Zhang, Penghao ; Wang, Luyu ; Pan, Maolin ; Wang, Qiang ; Xie, Xinling ; Xu, Saisheng ; Wang, Chen ; Wu, Chunlei ; Xu, Min ; Jin, Jian ; Zhang, David Wei

Micromachines (Basel), 2023-06, Vol.14 (7), p.1278 [Periódico revisado por pares]

Switzerland: MDPI AG

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3
Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth
Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth
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Light-emitting diodes with surface gallium nitride p-n homojunction structure formed by selective area regrowth

Lee, Ming-Lun ; Wang, Shih-Sian ; Yeh, Yu-Hsiang ; Liao, Po-Hsun ; Sheu, Jinn-Kong

Scientific reports, 2019-03, Vol.9 (1), p.3243-3243, Article 3243 [Periódico revisado por pares]

England: Nature Publishing Group

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4
Mean Free Path-Thermal Conductivity Accumulation Calculations for Wurtzite Gallium Nitride: Two Approaches
Mean Free Path-Thermal Conductivity Accumulation Calculations for Wurtzite Gallium Nitride: Two Approaches
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Mean Free Path-Thermal Conductivity Accumulation Calculations for Wurtzite Gallium Nitride: Two Approaches

Albar, Ilke ; Donmezer, Nazli

Nanoscale and microscale thermophysical engineering, 2020-04, Vol.24 (2), p.80-93 [Periódico revisado por pares]

Abingdon: Taylor & Francis

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5
Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz
Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz
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Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz

Roy, Biswadev ; Wu, Marvin H. ; Vlahovic, Branislav

Data in brief, 2020-12, Vol.33, p.106419-106419, Article 106419 [Periódico revisado por pares]

Elsevier Inc

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6
Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films
Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films
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Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films

Wu, Xiaoyan ; Li, Wei ; Chen, Qingrong ; Xu, Caixia ; Wang, Jiamian ; Wu, Lingyuan ; Liu, Guodong ; Wang, Weiping ; Li, Ting ; Chen, Ping ; Xu, Long

Nanomaterials (Basel, Switzerland), 2022-03, Vol.12 (6), p.899 [Periódico revisado por pares]

Switzerland: MDPI AG

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7
Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride
Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride
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Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Tripepi, Michael ; Zhang, Simin ; Harris, Brandon ; Talisa, Noah ; Yoo, Jae-Hyuck ; Peelaers, Hartwin ; Elhadj, Selim ; Chowdhury, Enam

APL materials, 2022-07, Vol.10 (7), p.071107-071107-9 [Periódico revisado por pares]

United States: American Institute of Physics

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8
A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap
A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap
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A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide Bandgap

Liu, An-Chen ; Lai, Yung-Yu ; Chen, Hsin-Chu ; Chiu, An-Ping ; Kuo, Hao-Chung

Micromachines (Basel), 2023-03, Vol.14 (4), p.764 [Periódico revisado por pares]

Switzerland: MDPI AG

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9
Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars
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Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

Sato, Shin-Ichiro ; Li, Shuo ; Greentree, Andrew D ; Deki, Manato ; Nishimura, Tomoaki ; Watanabe, Hirotaka ; Nitta, Shugo ; Honda, Yoshio ; Amano, Hiroshi ; Gibson, Brant C ; Ohshima, Takeshi

Scientific reports, 2022-12, Vol.12 (1), p.21208-21208 [Periódico revisado por pares]

England: Nature Publishing Group

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10
Crystal Orientation Dependence of Gallium Nitride Wear
Crystal Orientation Dependence of Gallium Nitride Wear
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Crystal Orientation Dependence of Gallium Nitride Wear

Zeng, Guosong ; Sun, Wei ; Song, Renbo ; Tansu, Nelson ; Krick, Brandon A

Scientific reports, 2017-10, Vol.7 (1), p.14126-6, Article 14126 [Periódico revisado por pares]

England: Nature Publishing Group

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