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Refinado por: Base de dados/Biblioteca: Materials Research Database remover Nome da Publicação: Semiconductor Science And Technology remover
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1
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel
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Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

Gökden, S ; Tülek, R ; Teke, A ; Leach, J H ; Fan, Q ; Xie, J ; Özgür, Ü ; Morkoç, H ; Lisesivdin, S B ; Özbay, E

Semiconductor science and technology, 2010-04, Vol.25 (4), p.045024-045024 [Periódico revisado por pares]

Bristol: IOP Publishing

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2
Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
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Efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading

Kudryk, Ya Ya ; Zinovchuk, A V

Semiconductor science and technology, 2011-09, Vol.26 (9), p.095007-5 [Periódico revisado por pares]

Bristol: IOP Publishing

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3
Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment
Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment
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Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment

O'Mahony, Donagh ; Zimmerman, Walter ; Steffen, Sinje ; Hilgarth, Just ; Maaskant, Pleun ; Ginige, Ravin ; Lewis, Liam ; Lambert, Benoit ; Corbett, Brian

Semiconductor science and technology, 2009-12, Vol.24 (12), p.125008-125008 (8) [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering
Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering
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Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

Sarua, A ; Ji, Hangfeng ; Pomeroy, J W ; Uren, M J ; Martin, T ; Kuball, M

Semiconductor science and technology, 2010-08, Vol.25 (8), p.085004-085004 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design
Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design
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Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design

TSAI, Chun-Fu ; SU, Yan-Kuin ; LIN, Chun-Liang

Semiconductor science and technology, 2011-09, Vol.26 (9), p.95013-4 [Periódico revisado por pares]

Bristol: Institute of Physics

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6
Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
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Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Lu, C Y ; Bahat-Treidel, E ; Hilt, O ; Lossy, R ; Chaturvedi, N ; Chang, E Y ; Würfl, J ; Tränkle, G

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075005-075005 [Periódico revisado por pares]

Bristol: IOP Publishing

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7
Structural dependence of optical gain in dip-shaped InGaN/GaN quantum wells
Structural dependence of optical gain in dip-shaped InGaN/GaN quantum wells
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Structural dependence of optical gain in dip-shaped InGaN/GaN quantum wells

Park, Seoung-Hwan ; Ahn, Doyeol ; Koo, Bun-Hei ; Kim, Jong-Wook

Semiconductor science and technology, 2010-09, Vol.25 (9), p.095013-095013 [Periódico revisado por pares]

Bristol: IOP Publishing

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8
Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN
Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN
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Fabrication and characterization of high-brightness light emitting diodes based on n-ZnO nanorods grown by a low-temperature chemical method on p-4H-SiC and p-GaN

Alvi, N H ; Riaz, M ; Tzamalis, G ; Nur, O ; Willander, M

Semiconductor science and technology, 2010-06, Vol.25 (6), p.065004-065004 [Periódico revisado por pares]

Bristol: IOP Publishing

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9
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates FREE ARTICLE
Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates FREE ARTICLE
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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates FREE ARTICLE

Ketteniss, N ; Khoshroo, L Rahimzadeh ; Eickelkamp, M ; Heuken, M ; Kalisch, H ; Jansen, R H ; Vescan, A

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075013-075013 [Periódico revisado por pares]

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10
Interface state density of free-standing GaN Schottky diodes
Interface state density of free-standing GaN Schottky diodes
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Interface state density of free-standing GaN Schottky diodes

Faraz, S M ; Ashraf, H ; Imran Arshad, M ; Hageman, P R ; Asghar, M ; Wahab, Q

Semiconductor science and technology, 2010-09, Vol.25 (9), p.095008-095008 [Periódico revisado por pares]

Bristol: IOP Publishing

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