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Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment
Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment
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Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical Environment

Kang, Yang ; Wang, Danhao ; Wang, Anyang ; Chen, Wei ; Liu, Boyang ; Fang, Shi ; Liu, Xin ; Li, Liuan ; Ge, Binghui ; Liu, Zhenghui ; Zuo, Chengjie ; Fu, Lan ; Guo, Yuzheng ; Liang, Kang ; Liu, Sheng ; Sun, Haiding

Advanced functional materials, 2024-02, Vol.34 (7), p.n/a [Periódico revisado por pares]

Hoboken: Wiley Subscription Services, Inc

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Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers
Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers
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Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

Sorokin, L. M. ; Gutkin, M. Yu ; Myasoedov, A. V. ; Kalmykov, A. E. ; Bessolov, V. N. ; Kukushkin, S. A.

Physics of the solid state, 2019-12, Vol.61 (12), p.2316-2320 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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Gallium Nitride as an Electromechanical Material
Gallium Nitride as an Electromechanical Material
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Gallium Nitride as an Electromechanical Material

Rais-Zadeh, Mina ; Gokhale, Vikrant Jayant ; Ansari, Azadeh ; Faucher, Marc ; Théron, Didier ; Cordier, Yvon ; Buchaillot, Lionel

Journal of microelectromechanical systems, 2014-12, Vol.23 (6), p.1252-1271 [Periódico revisado por pares]

New York: IEEE

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4
A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems
A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems
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A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems

Lee, Keon Jae ; Lee, Jaeseob ; Hwang, Heedon ; Reitmeier, Zachary J. ; Davis, Robert F. ; Rogers, John A. ; Nuzzo, Ralph G.

Small (Weinheim an der Bergstrasse, Germany), 2005-12, Vol.1 (12), p.1164-1168 [Periódico revisado por pares]

Weinheim: WILEY-VCH Verlag

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Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
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Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Lamhamdi, M. ; Cayrel, F. ; Frayssinet, E. ; Bazin, A.E. ; Yvon, A. ; Collard, E. ; Cordier, Y. ; Alquier, D.

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-04, Vol.372, p.67-71 [Periódico revisado por pares]

Elsevier B.V

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6
Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films
Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films
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Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films

Wu, Xiaoyan ; Li, Wei ; Chen, Qingrong ; Xu, Caixia ; Wang, Jiamian ; Wu, Lingyuan ; Liu, Guodong ; Wang, Weiping ; Li, Ting ; Chen, Ping ; Xu, Long

Nanomaterials (Basel, Switzerland), 2022-03, Vol.12 (6), p.899 [Periódico revisado por pares]

Switzerland: MDPI AG

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Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer
Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer
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Radical formation at the gallium nitride nanowire-electrolyte interface by photoactivated charge transfer

Philipps, J M ; Müntze, G M ; Hille, P ; Wallys, J ; Schörmann, J ; Teubert, J ; Hofmann, D M ; Eickhoff, M

Nanotechnology, 2013-08, Vol.24 (32), p.325701-325701 [Periódico revisado por pares]

Bristol: IOP Publishing

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8
Ammonothermal crystal growth of gallium nitride – A brief discussion of critical issues
Ammonothermal crystal growth of gallium nitride – A brief discussion of critical issues
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Ammonothermal crystal growth of gallium nitride – A brief discussion of critical issues

Ehrentraut, Dirk ; Fukuda, Tsuguo

Journal of crystal growth, 2010-09, Vol.312 (18), p.2514-2518 [Periódico revisado por pares]

Elsevier B.V

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9
Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride
Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride
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Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride

Hadi, Walid A. ; Cheekoori, Reddiprasad ; Shur, Michael S. ; O’Leary, Stephen K.

Journal of materials science. Materials in electronics, 2013-02, Vol.24 (2), p.807-813 [Periódico revisado por pares]

Boston: Springer US

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10
Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications
Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications
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Gallium Arsenide and Gallium Nitride Semiconductors for Power and Optoelectronics Devices Applications

Sharma, Ram Chhavi ; Nandal, Raina ; Tanwar, Nisha ; Yadav, Reema ; Bhardwaj, Jayant ; Verma, Aakash

Journal of physics. Conference series, 2023-02, Vol.2426 (1), p.12008 [Periódico revisado por pares]

Bristol: IOP Publishing

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