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Koninklijke Philips N.v.; Patent Application Titled "Integration of Gallium Nitride Leds with Aluminum Gallium Nitride/Gallium Nitride Devices on Silicon Substrates for Ac Leds" Published Online
Koninklijke Philips N.v.; Patent Application Titled "Integration of Gallium Nitride Leds with Aluminum Gallium Nitride/Gallium Nitride Devices on Silicon Substrates for Ac Leds" Published Online
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Koninklijke Philips N.v.; Patent Application Titled "Integration of Gallium Nitride Leds with Aluminum Gallium Nitride/Gallium Nitride Devices on Silicon Substrates for Ac Leds" Published Online

Chemicals & Chemistry, 2015, p.3992

Atlanta: NewsRx

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2
Semiconductor Integrated Circuits Companies; Patent Issued for Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
Semiconductor Integrated Circuits Companies; Patent Issued for Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
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Semiconductor Integrated Circuits Companies; Patent Issued for Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer

Journal of Engineering, 2015, p.4342

Atlanta: NewsRx

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3
Koninklijke Philips N.V.; Patent Issued for Integration of Gallium Nitride LEDs with Aluminum Nitride/Gallium Nitride Devices on Silicon Substrates for AC LEDs
Koninklijke Philips N.V.; Patent Issued for Integration of Gallium Nitride LEDs with Aluminum Nitride/Gallium Nitride Devices on Silicon Substrates for AC LEDs
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Koninklijke Philips N.V.; Patent Issued for Integration of Gallium Nitride LEDs with Aluminum Nitride/Gallium Nitride Devices on Silicon Substrates for AC LEDs

Journal of Engineering, 2015, p.4673

Atlanta: NewsRx

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4
Semiconductor- Memory Chip Companies; Patent Issued for Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate
Semiconductor- Memory Chip Companies; Patent Issued for Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate
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Semiconductor- Memory Chip Companies; Patent Issued for Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate

Journal of Engineering, 2015, p.5043

Atlanta: NewsRx

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5
International Rectifier Corporation; Patent Application Titled "Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer" Published Online
International Rectifier Corporation; Patent Application Titled "Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer" Published Online
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International Rectifier Corporation; Patent Application Titled "Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer" Published Online

Chemicals & Chemistry, 2014, p.2703

Atlanta: NewsRx

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6
Sumitomo Electric Industries, Ltd.; Patent Issued for Epitaxial Wafer, Method for Manufacturing Gallium Nitride Semiconductor Device, Gallium Nitride Semiconductor Device and Gallium Oxide Wafer
Sumitomo Electric Industries, Ltd.; Patent Issued for Epitaxial Wafer, Method for Manufacturing Gallium Nitride Semiconductor Device, Gallium Nitride Semiconductor Device and Gallium Oxide Wafer
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Sumitomo Electric Industries, Ltd.; Patent Issued for Epitaxial Wafer, Method for Manufacturing Gallium Nitride Semiconductor Device, Gallium Nitride Semiconductor Device and Gallium Oxide Wafer

Journal of Engineering, 2013, p.4061

Atlanta: NewsRx

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7
Patents; "Method of Manufacturing Gallium Nitride Substrate and Gallium Nitride Substrate Manufactured Thereby" in Patent Application Approval Process
Patents; "Method of Manufacturing Gallium Nitride Substrate and Gallium Nitride Substrate Manufactured Thereby" in Patent Application Approval Process
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Patents; "Method of Manufacturing Gallium Nitride Substrate and Gallium Nitride Substrate Manufactured Thereby" in Patent Application Approval Process

Chemicals & Chemistry, 2014, p.2286

Atlanta: NewsRx

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8
Patents; "Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate" in Patent Application Approval Process (USPTO 20150214037)
Patents; "Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate" in Patent Application Approval Process (USPTO 20150214037)
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Patents; "Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate" in Patent Application Approval Process (USPTO 20150214037)

Chemicals & Chemistry, 2015, p.2502

Atlanta: NewsRx

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9
Samsung Electronics Co., Ltd.; "Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate" in Patent Application Approval Process
Samsung Electronics Co., Ltd.; "Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate" in Patent Application Approval Process
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Samsung Electronics Co., Ltd.; "Structure Including Gallium Nitride Substrate and Method of Manufacturing the Gallium Nitride Substrate" in Patent Application Approval Process

Chemicals & Chemistry, 2014, p.2222

Atlanta: NewsRx

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10
Soitec; Patent Issued for Method for Manufacturing a Layer of Gallium Nitride Or Gallium and Aluminum Nitride
Soitec; Patent Issued for Method for Manufacturing a Layer of Gallium Nitride Or Gallium and Aluminum Nitride
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Soitec; Patent Issued for Method for Manufacturing a Layer of Gallium Nitride Or Gallium and Aluminum Nitride

Journal of Engineering, 2012, p.251

Atlanta: NewsRx

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