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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

KOBAYASHI, Yasuyuki ; KUMAKURA, Kazuhide ; AKASAKA, Tetsuya ; MAKIMOTO, Toshiki

Nature (London), 2012-04, Vol.484 (7393), p.223-227 [Periódico revisado por pares]

London: Nature Publishing Group

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2
Graphene integration with nitride semiconductors for high power and high frequency electronics
Graphene integration with nitride semiconductors for high power and high frequency electronics
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Graphene integration with nitride semiconductors for high power and high frequency electronics

Giannazzo, F. ; Fisichella, G. ; Greco, G. ; La Magna, A. ; Roccaforte, F. ; Pecz, B. ; Yakimova, R. ; Dagher, R. ; Michon, A. ; Cordier, Y.

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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3
Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors
Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors
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Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors

Tian, Zhiwen ; Ji, Xuan ; Yang, Dongwei ; Liu, Pei

Electronics (Basel), 2023-11, Vol.12 (21), p.4435 [Periódico revisado por pares]

Basel: MDPI AG

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4
Self-rectifying resistive switching behavior observed in Al^sub 2^O^sub 3^-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode
Self-rectifying resistive switching behavior observed in Al^sub 2^O^sub 3^-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode
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Self-rectifying resistive switching behavior observed in Al^sub 2^O^sub 3^-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode

Kim, Hee-Dong ; Kim, Sungho ; Yun, Min Ju

Journal of alloys and compounds, 2018-04, Vol.742, p.822 [Periódico revisado por pares]

Lausanne: Elsevier BV

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5
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
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Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

Lee, Hsin-Ying ; Ju, Ying-Hao ; Chyi, Jen-Inn ; Lee, Ching-Ting

Materials, 2021-12, Vol.15 (1), p.42 [Periódico revisado por pares]

Switzerland: MDPI AG

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6
Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt
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Direct Chemical Vapor Deposition of Large-Area Carbon Thin Films on Gallium Nitride for Transparent Electrodes: A First Attempt

Jie Sun ; Cole, M. T. ; Ahmad, S. A. ; Backe, O. ; Ive, T. ; Loffler, M. ; Lindvall, N. ; Olsson, E. ; Teo, K. B. K. ; Liu, J. ; Larsson, A. ; Yurgens, A. ; Haglund, A.

IEEE transactions on semiconductor manufacturing, 2012-08, Vol.25 (3), p.494-501 [Periódico revisado por pares]

New York, NY: IEEE

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7
Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient
Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient
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Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient

Ma, Ying ; Chen, Liang ; Dong, Zhihua ; Hong, Yifang ; Xiao, Yang ; Xin, Yijie ; Zhang, Bin ; Qin, Hua ; Zhang, Ting ; Zhang, Xiaodong ; Yu, Guohao ; Cheng, Zhiqun ; Mao, Lingfeng ; Cai, Yong

Electronics (Basel), 2023-04, Vol.12 (8), p.1809 [Periódico revisado por pares]

Basel: MDPI AG

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8
A new analytical model for the response of AlGaN/GaN HEMT-based pH sensors
A new analytical model for the response of AlGaN/GaN HEMT-based pH sensors
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A new analytical model for the response of AlGaN/GaN HEMT-based pH sensors

Upadhyay, Kavita Thorat ; Chattopadhyay, Manju K.

Journal of computational electronics, 2021-06, Vol.20 (3), p.1400-1410 [Periódico revisado por pares]

New York: Springer US

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9
32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Kim, Tae Kyoung ; Islam, Abu Bashar Mohammad Hamidul ; Cha, Yu-Jung ; Kwak, Joon Seop

Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3045 [Periódico revisado por pares]

Basel: MDPI AG

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10
AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts
AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts
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AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Pandit, Bhishma ; Cho, Jaehee

Applied sciences, 2018-11, Vol.8 (11), p.2098 [Periódico revisado por pares]

Basel: MDPI AG

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