Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin FilmsWu, Xiaoyan ; Li, Wei ; Chen, Qingrong ; Xu, Caixia ; Wang, Jiamian ; Wu, Lingyuan ; Liu, Guodong ; Wang, Weiping ; Li, Ting ; Chen, Ping ; Xu, LongNanomaterials (Basel, Switzerland), 2022-03, Vol.12 (6), p.899 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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2 |
Material Type: Artigo
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Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire SubstratesXu, Long ; Cao, Yuehan ; Song, Tianwei ; Xu, CaixiaNanomaterials (Basel, Switzerland), 2022-09, Vol.12 (18), p.3238 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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3 |
Material Type: Artigo
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Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well StructureZhao, Xiaoyu ; Wan, Zehong ; Gong, Liyan ; Tao, Guoyi ; Zhou, ShengjunNanomaterials (Basel, Switzerland), 2021-11, Vol.11 (12), p.3231 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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4 |
Material Type: Artigo
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Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap SemiconductorsCastelletto, Stefania ; Maksimovic, Jovan ; Katkus, Tomas ; Ohshima, Takeshi ; Johnson, Brett C ; Juodkazis, SauliusNanomaterials (Basel, Switzerland), 2020-12, Vol.11 (1), p.72 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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5 |
Material Type: Artigo
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Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1−xN Quantum Dot Solar CellsAouami, Asmae El ; Pérez, Laura M. ; Feddi, Kawtar ; El-Yadri, Mohamed ; Dujardin, Francis ; Suazo, Manuel J. ; Laroze, David ; Courel, Maykel ; Feddi, El MustaphaNanomaterials (Basel, Switzerland), 2021-05, Vol.11 (5), p.1317 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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6 |
Material Type: Artigo
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Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic IntegrationPark, Byeong-Jun ; Kim, Han-Sol ; Hahm, Sung-HoNanomaterials (Basel, Switzerland), 2023-12, Vol.14 (1), p.59 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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7 |
Material Type: Artigo
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White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light CommunicationLiu, Xiaoyan ; Tao, Langyi ; Mei, Shiliang ; Cui, Zhongjie ; Shen, Daqi ; Sheng, Zhengxuan ; Yu, Jinghao ; Ye, Pengfei ; Zhi, Ting ; Tao, Tao ; Wang, Lei ; Guo, Ruiqian ; Tian, PengfeiNanomaterials (Basel, Switzerland), 2022-02, Vol.12 (4), p.627 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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8 |
Material Type: Artigo
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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical CommunicationKim, Tae Kyoung ; Islam, Abu Bashar Mohammad Hamidul ; Cha, Yu-Jung ; Kwak, Joon SeopNanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3045 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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9 |
Material Type: Artigo
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Reliability Analysis of AlGaN-Based Deep UV-LEDsMaraj, Mudassar ; Min, Li ; Sun, WenhongNanomaterials (Basel, Switzerland), 2022-10, Vol.12 (21), p.3731 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |
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10 |
Material Type: Artigo
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Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN LayerLi, Jianfei ; Chen, Duo ; Li, Kuilong ; Wang, Qiang ; Shi, Mengyao ; Diao, Dejie ; Cheng, Chen ; Li, Changfu ; Leng, JiancaiNanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3134 [Periódico revisado por pares]Basel: MDPI AGTexto completo disponível |