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Refinado por: Nome da Publicação: Nanomaterials remover assunto: Semiconductors remover
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1
Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films
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Mechanism of Photocurrent Degradation and Contactless Healing in p -Type Mg-Doped Gallium Nitride Thin Films

Wu, Xiaoyan ; Li, Wei ; Chen, Qingrong ; Xu, Caixia ; Wang, Jiamian ; Wu, Lingyuan ; Liu, Guodong ; Wang, Weiping ; Li, Ting ; Chen, Ping ; Xu, Long

Nanomaterials (Basel, Switzerland), 2022-03, Vol.12 (6), p.899 [Periódico revisado por pares]

Switzerland: MDPI AG

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2
Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates
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Resonant Lasing Emission in Undoped and Mg-Doped Gallium Nitride Thin Films on Interfacial Periodic Patterned Sapphire Substrates

Xu, Long ; Cao, Yuehan ; Song, Tianwei ; Xu, Caixia

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (18), p.3238 [Periódico revisado por pares]

Basel: MDPI AG

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3
Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure
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Enhanced Optoelectronic Performance of Yellow Light-Emitting Diodes Grown on InGaN/GaN Pre-Well Structure

Zhao, Xiaoyu ; Wan, Zehong ; Gong, Liyan ; Tao, Guoyi ; Zhou, Shengjun

Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (12), p.3231 [Periódico revisado por pares]

Switzerland: MDPI AG

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4
Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors
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Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Castelletto, Stefania ; Maksimovic, Jovan ; Katkus, Tomas ; Ohshima, Takeshi ; Johnson, Brett C ; Juodkazis, Saulius

Nanomaterials (Basel, Switzerland), 2020-12, Vol.11 (1), p.72 [Periódico revisado por pares]

Switzerland: MDPI AG

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5
Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1−xN Quantum Dot Solar Cells
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Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1−xN Quantum Dot Solar Cells

Aouami, Asmae El ; Pérez, Laura M. ; Feddi, Kawtar ; El-Yadri, Mohamed ; Dujardin, Francis ; Suazo, Manuel J. ; Laroze, David ; Courel, Maykel ; Feddi, El Mustapha

Nanomaterials (Basel, Switzerland), 2021-05, Vol.11 (5), p.1317 [Periódico revisado por pares]

Basel: MDPI AG

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6
Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration
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Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

Park, Byeong-Jun ; Kim, Han-Sol ; Hahm, Sung-Ho

Nanomaterials (Basel, Switzerland), 2023-12, Vol.14 (1), p.59 [Periódico revisado por pares]

Switzerland: MDPI AG

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7
White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication
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White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication

Liu, Xiaoyan ; Tao, Langyi ; Mei, Shiliang ; Cui, Zhongjie ; Shen, Daqi ; Sheng, Zhengxuan ; Yu, Jinghao ; Ye, Pengfei ; Zhi, Ting ; Tao, Tao ; Wang, Lei ; Guo, Ruiqian ; Tian, Pengfei

Nanomaterials (Basel, Switzerland), 2022-02, Vol.12 (4), p.627 [Periódico revisado por pares]

Switzerland: MDPI AG

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8
32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Kim, Tae Kyoung ; Islam, Abu Bashar Mohammad Hamidul ; Cha, Yu-Jung ; Kwak, Joon Seop

Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3045 [Periódico revisado por pares]

Basel: MDPI AG

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9
Reliability Analysis of AlGaN-Based Deep UV-LEDs
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Reliability Analysis of AlGaN-Based Deep UV-LEDs

Maraj, Mudassar ; Min, Li ; Sun, Wenhong

Nanomaterials (Basel, Switzerland), 2022-10, Vol.12 (21), p.3731 [Periódico revisado por pares]

Basel: MDPI AG

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10
Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
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Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Li, Jianfei ; Chen, Duo ; Li, Kuilong ; Wang, Qiang ; Shi, Mengyao ; Diao, Dejie ; Cheng, Chen ; Li, Changfu ; Leng, Jiancai

Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.3134 [Periódico revisado por pares]

Basel: MDPI AG

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