Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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41 |
Material Type: Artigo
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Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply [Industry View]Mishra, Umesh K.Proceedings of the IEEE, 2023-04, Vol.111 (4), p.322-328 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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42 |
Material Type: Artigo
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Polarization Engineered Second Harmonic Generation Enhancement From Amorphous Silicon - Gallium Nitride Heterogeneous Resonant MetasurfaceMenon, Sruti ; Raghunathan, VarunIEEE journal of selected topics in quantum electronics, 2023-01, Vol.29 (1: Nonlinear Integrated Photonics), p.1-8 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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43 |
Material Type: Artigo
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Let There Be Light-With Gallium Nitride: The 2014 Nobel Prize in PhysicsVon Dollen, Paul ; Pimputkar, Siddha ; Speck, James S.Angewandte Chemie (International ed.), 2014-12, Vol.53 (51), p.13978-13980 [Periódico revisado por pares]Weinheim: WILEY-VCH VerlagTexto completo disponível |
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44 |
Material Type: Artigo
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DFT study of electronic and structural properties of single‐walled gallium nitride nanotubesShabani, Mostafa ; Movlarooy, Tayebeh ; Hessami Pilehrood, SaeidInternational journal of quantum chemistry, 2023-09, Vol.123 (17), p.n/a [Periódico revisado por pares]Hoboken, USA: John Wiley & Sons, IncTexto completo disponível |
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45 |
Material Type: Artigo
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Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride filmsJung, Younghun ; Baik, Kwang Hyeon ; Mastro, Michael A ; Hite, Jennifer K ; Eddy, Charles R ; Kim, JihyunPhysical chemistry chemical physics : PCCP, 2014-08, Vol.16 (3), p.1578-15783 [Periódico revisado por pares]EnglandTexto completo disponível |
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46 |
Material Type: Artigo
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Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxyKimura, T. ; Shimazu, H. ; Kataoka, K. ; Itoh, K. ; Narita, T. ; Uedono, A. ; Tokuda, Y. ; Tanaka, D. ; Nitta, S. ; Amano, H. ; Nakamura, D.Applied physics letters, 2024-01, Vol.124 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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47 |
Material Type: Artigo
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Exploring the Potential of c‑Plane Indium Gallium Nitride Quantum Dots for Twin-Photon EmissionPatra, Saroj Kanta ; Schulz, StefanNano letters, 2020-01, Vol.20 (1), p.234-241 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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48 |
Material Type: Artigo
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Preparation of gallium nitride from gallium-magnesium alloy powdersYan, Guojun ; Yan, Changming ; Qiu, Yu ; Cun, Minmin ; Wang, Liyu ; Liu, YinMaterials science and technology, 2019-11, Vol.35 (16), p.1950-1955 [Periódico revisado por pares]London, England: Taylor & FrancisTexto completo disponível |
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49 |
Material Type: Artigo
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Novel nanoceramics from in situ made nanocrystalline powders of pure nitrides and their composites in the system aluminum nitride AlN/gallium nitride GaN/aluminum gallium nitride Al0.5Ga0.5NDrygas, Mariusz ; Kapusta, Katarzyna ; Janik, Jerzy F. ; Bucko, Miroslaw M. ; Gierlotka, Stanislaw ; Stelmakh, Svitlana ; Palosz, Bogdan ; Olejniczak, ZbigniewJournal of the European Ceramic Society, 2020-12, Vol.40 (15), p.5339-5348 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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50 |
Material Type: Artigo
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Light‐Induced Adaptive Structural Evolution in Gallium Nitride Nanowire/Nickel Hydroxide Symbiotic System in Photoelectrochemical EnvironmentKang, Yang ; Wang, Danhao ; Wang, Anyang ; Chen, Wei ; Liu, Boyang ; Fang, Shi ; Liu, Xin ; Li, Liuan ; Ge, Binghui ; Liu, Zhenghui ; Zuo, Chengjie ; Fu, Lan ; Guo, Yuzheng ; Liang, Kang ; Liu, Sheng ; Sun, HaidingAdvanced functional materials, 2024-02, Vol.34 (7), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |