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Nitrogen vacancy–acceptor complexes in gallium nitride
Nitrogen vacancy–acceptor complexes in gallium nitride
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Nitrogen vacancy–acceptor complexes in gallium nitride

Vorobiov, Mykhailo ; Demchenko, Denis O. ; Andrieiev, Oleksandr ; Reshchikov, Michael A.

Journal of applied physics, 2024-04, Vol.135 (15) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Size effects in the thermal conductivity of gallium oxide ( β -Ga2O3) films grown via open-atmosphere annealing of gallium nitride
Size effects in the thermal conductivity of gallium oxide ( β -Ga2O3) films grown via open-atmosphere annealing of gallium nitride
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Size effects in the thermal conductivity of gallium oxide ( β -Ga2O3) films grown via open-atmosphere annealing of gallium nitride

Szwejkowski, Chester J. ; Creange, Nicole C. ; Sun, Kai ; Giri, Ashutosh ; Donovan, Brian F. ; Constantin, Costel ; Hopkins, Patrick E.

Journal of applied physics, 2015-02, Vol.117 (8) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Multi-output deep learning model for simultaneous prediction of figure of merits (Ion, Gm, and Vth) of gallium nitride high electron mobility transistors
Multi-output deep learning model for simultaneous prediction of figure of merits (Ion, Gm, and Vth) of gallium nitride high electron mobility transistors
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Multi-output deep learning model for simultaneous prediction of figure of merits (Ion, Gm, and Vth) of gallium nitride high electron mobility transistors

Mishra, Shivanshu ; Chaturvedi, Nidhi

Journal of applied physics, 2022-02, Vol.131 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy
Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy
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Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy

Fireman, Micha N. ; Bonef, Bastien ; Young, Erin C. ; Nookala, Nishant ; Belkin, Mikhail A. ; Speck, James S.

Journal of applied physics, 2017-08, Vol.122 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias
Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias
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Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias

Ghassemi, H. ; Lang, A. ; Johnson, C. ; Wang, R. ; Song, B. ; Phillips, P. ; Qiao, Q. ; Klie, R. F. ; Xing, H. G. ; Taheri, M. L.

Journal of applied physics, 2013-08, Vol.114 (6) [Periódico revisado por pares]

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6
Microstructural, optical, and electrical characterization of semipolar ( 11 2 ¯ 2 ) gallium nitride grown by epitaxial lateral overgrowth
Microstructural, optical, and electrical characterization of semipolar ( 11 2 ¯ 2 ) gallium nitride grown by epitaxial lateral overgrowth
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Microstructural, optical, and electrical characterization of semipolar ( 11 2 ¯ 2 ) gallium nitride grown by epitaxial lateral overgrowth

Zhu, Tongtong ; Johnston, Carol F ; Kappers, Menno J ; Oliver, Rachel A

Journal of applied physics, 2010-10, Vol.108 (8), p.083521-083521-8 [Periódico revisado por pares]

American Institute of Physics

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7
A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide
A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide
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A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide

Hadi, Walid A. ; Chowdhury, Shamsul ; Shur, Michael S. ; O'Leary, Stephen K.

Journal of applied physics, 2012-12, Vol.112 (12) [Periódico revisado por pares]

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8
Piezoelectric coefficient of aluminum nitride and gallium nitride
Piezoelectric coefficient of aluminum nitride and gallium nitride
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Piezoelectric coefficient of aluminum nitride and gallium nitride

Lueng, C. M. ; Chan, H. L. W. ; Surya, C. ; Choy, C. L.

Journal of applied physics, 2000-11, Vol.88 (9), p.5360-5363 [Periódico revisado por pares]

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9
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Yang, Tsung-Jui ; Shivaraman, Ravi ; Speck, James S. ; Wu, Yuh-Renn

Journal of applied physics, 2014-09, Vol.116 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Thermal stability study of gallium nitride based magnetic field sensor
Thermal stability study of gallium nitride based magnetic field sensor
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Thermal stability study of gallium nitride based magnetic field sensor

Shetty, Satish ; Kuchuk, Andrian ; Zamani-Alavijeh, Mohammad ; Hassan, Ayesha ; Eisner, Savannah R. ; Maia de Oliveira, Fernando ; Krone, Alexis ; Harris, John ; Thompson, Josh P. ; Eldose, Nirosh M. ; Mazur, Yuriy I. ; Huitink, David ; Senesky, Debbie G. ; Alan Mantooth, H. ; Salamo, Gregory J.

Journal of applied physics, 2023-10, Vol.134 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

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