Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Two-dimensional gallium nitride realized via graphene encapsulationAl Balushi, Zakaria Y ; Wang, Ke ; Ghosh, Ram Krishna ; Vilá, Rafael A ; Eichfeld, Sarah M ; Caldwell, Joshua D ; Qin, Xiaoye ; Lin, Yu-Chuan ; DeSario, Paul A ; Stone, Greg ; Subramanian, Shruti ; Paul, Dennis F ; Wallace, Robert M ; Datta, Suman ; Redwing, Joan M ; Robinson, Joshua ANature materials, 2016-11, Vol.15 (11), p.1166-1171 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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2 |
Material Type: Artigo
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History of Gallium-Nitride-Based Light-Emitting Diodes for IlluminationNakamura, Shuji ; Krames, M. R.Proceedings of the IEEE, 2013-10, Vol.101 (10), p.2211-2220 [Periódico revisado por pares]IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency DevicesGlavin, Nicholas R. ; Chabak, Kelson D. ; Heller, Eric R. ; Moore, Elizabeth A. ; Prusnick, Timothy A. ; Maruyama, Benji ; Walker, Dennis E. ; Dorsey, Donald L. ; Paduano, Qing ; Snure, MichaelAdvanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
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4 |
Material Type: Artigo
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Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium NitrideBerhane, Amanuel M. ; Jeong, Kwang‐Yong ; Bodrog, Zoltán ; Fiedler, Saskia ; Schröder, Tim ; Triviño, Noelia Vico ; Palacios, Tomás ; Gali, Adam ; Toth, Milos ; Englund, Dirk ; Aharonovich, IgorAdvanced materials (Weinheim), 2017-03, Vol.29 (12), p.np-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
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5 |
Material Type: Artigo
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Alloying enhanced negative Poisson's ratio in two-dimensional aluminum gallium nitride (AlGaN)Wang, Xiaoxia ; Tang, Zhunyun ; Yu, Linfeng ; Wei, Donghai ; Yuan, Zonghao ; Tang, Chao ; Wang, Huimin ; Ouyang, Tao ; Qin, GuangzhaoPhysical chemistry chemical physics : PCCP, 2024-02, Vol.26 (8), p.71-719 [Periódico revisado por pares]England: Royal Society of ChemistryTexto completo disponível |
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6 |
Material Type: Artigo
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Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium NitrideChen, Junting ; Zhao, Junlei ; Feng, Sirui ; Zhang, Li ; Cheng, Yan ; Liao, Hang ; Zheng, Zheyang ; Chen, Xiaolong ; Gao, Zhen ; Chen, Kevin J. ; Hua, MengyuanAdvanced materials (Weinheim), 2023-03, Vol.35 (12), p.e2208960-n/a [Periódico revisado por pares]Germany: Wiley Subscription Services, IncTexto completo disponível |
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7 |
Material Type: Artigo
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Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-in-Rod HeterostructuresZhou, Xiang ; Lu, Ming-Yen ; Lu, Yu-Jung ; Jones, Eric J ; Gwo, Shangjr ; Gradečak, SilvijaACS nano, 2015-03, Vol.9 (3), p.2868-2875 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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Nitrogen vacancy–acceptor complexes in gallium nitrideVorobiov, Mykhailo ; Demchenko, Denis O. ; Andrieiev, Oleksandr ; Reshchikov, Michael A.Journal of applied physics, 2024-04, Vol.135 (15) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics--a Comparative Study with Gallium NitrideWu, Xufei ; Lee, Jonghoon ; Varshney, Vikas ; Wohlwend, Jennifer L ; Roy, Ajit K ; Luo, TengfeiScientific reports, 2016-03, Vol.6 (1), p.22504-22504, Article 22504 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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10 |
Material Type: Artigo
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Lead ion detection using glutathione-functionalized aluminum gallium nitride/gallium nitride high-electron-mobility transistorsDong, Xiaohu ; Jiang, Xuecheng ; Gu, Yan ; Wei, Chunlei ; Xie, Zhijian ; Zhang, Qi ; Qian, Weiying ; Zhang, Xiangyang ; Zhu, Chun ; Lu, Naiyan ; Chen, Guoqing ; Yang, GuofengCurrent applied physics, 2023-06, Vol.50, p.32-37 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |