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1
Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride
Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride
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Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride

Quah, Hock Jin ; Cheong, Kuan Yew

Journal of alloys and compounds, 2013-10, Vol.575, p.382-392 [Periódico revisado por pares]

Kidlington: Elsevier B.V

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2
Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet
Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet
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Femtosecond laser micromachining of GaN using different wavelengths from near-infrared to ultraviolet

Lucas Konaka Nolasco Gustavo Foresto Brito de Almeida; Tobias Voss; Cleber Renato Mendonça

Journal of Alloys and Compounds Amsterdam v. 877, p. 160259-1-160259-5, Oct. 2021

Amsterdam 2021

Localização: IFSC - Inst. Física de São Carlos    (PROD031540 )(Acessar)

3
Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal–organic chemical vapor deposition
Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal–organic chemical vapor deposition
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Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal–organic chemical vapor deposition

Cui, Jishi ; Xiao, Hongdi ; Liu, Jianqiang ; Luan, Caina ; Ji, Ziwu ; Pei, Haiyan

Journal of alloys and compounds, 2013-06, Vol.563, p.72-76 [Periódico revisado por pares]

Kidlington: Elsevier B.V

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4
Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films tuning the nonlinear optical response by alloying and doping
Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films tuning the nonlinear optical response by alloying and doping
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Femtosecond-laser induced two-photon absorption of GaN and AlxGa1-xN thin films tuning the nonlinear optical response by alloying and doping

M. G. Vivas Diego da Silva Manoel; Jessica Dipold; Renato Juliano Martins; R. D Fonseca; I Manglano-Clavero; Christoph Margenfeld; A Waag; Tobias Voss; Cleber Renato Mendonça

Journal of Alloys and Compounds Amsterdam : Elsevier BV v. 825, p. 153828-1-153828-4, June 2020

Amsterdam 2020

Localização: IFSC - Inst. Física de São Carlos    (PROD029977 )(Acessar)

5
Diffusion of Mn in gallium nitride: Experiment and modelling
Diffusion of Mn in gallium nitride: Experiment and modelling
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Diffusion of Mn in gallium nitride: Experiment and modelling

Jakiela, Rafal ; Gas, Katarzyna ; Sawicki, Maciej ; Barcz, Adam

Journal of alloys and compounds, 2019-01, Vol.771, p.215-220 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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6
Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes
Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes
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Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Li, Yuan ; Wang, Wenliang ; Li, Xiaochan ; Huang, Liegen ; Lin, Zhiting ; Zheng, Yulin ; Chen, Xiaofeng ; Li, Guoqiang

Journal of alloys and compounds, 2019-01, Vol.771, p.1000-1008 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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7
Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array
Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array
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Self-powered ultraviolet photodetection realized by GaN/Si nanoheterostructure based on silicon nanoporous pillar array

Chen, Xue-Xia ; Xiao, Xu-Hua ; Shi, Zhi-Feng ; Du, Rui ; Li, Xin-Jian

Journal of alloys and compounds, 2018-10, Vol.767, p.368-373 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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8
Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition
Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition
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Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

Choi, Seok ; Ansari, Abu Saad ; Yun, Hee Ju ; Kim, Hogyoung ; Shong, Bonggeun ; Choi, Byung Joon

Journal of alloys and compounds, 2021-02, Vol.854, p.157186, Article 157186 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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9
Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor
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Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor

Ren, Bing ; Liao, Meiyong ; Sumiya, Masatomo ; Li, Jian ; Wang, Lei ; Liu, Xinke ; Koide, Yasuo ; Sang, Liwen

Journal of alloys and compounds, 2020-07, Vol.829 (C), p.154542, Article 154542 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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10
Structural and electrical characteristics of GaN, n-GaN and A1xGa1−xN
Structural and electrical characteristics of GaN, n-GaN and A1xGa1−xN
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Structural and electrical characteristics of GaN, n-GaN and A1xGa1−xN

Arivazhagan, P. ; Ramesh, R. ; Kumar, Ramadoss Roop ; Faulques, Eric ; Bennis, Fouad ; Baskar, K.

Journal of alloys and compounds, 2016-01, Vol.656, p.110-118 [Periódico revisado por pares]

Elsevier B.V

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Deste Autor:

  1. Voss, T
  2. Mendonça, C
  3. Fonseca, R
  4. Vivas, M
  5. Waag, A

Neste Assunto:

  1. Materials Science
  2. Physical Sciences
  3. Chemistry
  4. Science & Technology
  5. Technology

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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