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Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy
Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy
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Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy

Kimura, T. ; Shimazu, H. ; Kataoka, K. ; Itoh, K. ; Narita, T. ; Uedono, A. ; Tokuda, Y. ; Tanaka, D. ; Nitta, S. ; Amano, H. ; Nakamura, D.

Applied physics letters, 2024-01, Vol.124 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Investigation of n-type gallium nitride grating for applications in coherent thermal sources
Investigation of n-type gallium nitride grating for applications in coherent thermal sources
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Investigation of n-type gallium nitride grating for applications in coherent thermal sources

Janonis, Vytautas ; Tumėnas, Saulius ; Prystawko, Pawel ; Kacperski, Jacek ; Kašalynas, Irmantas

Applied physics letters, 2020-03, Vol.116 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Thermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K
Thermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K
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Thermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K

Donovan, Brian F. ; Szwejkowski, Chester J. ; Duda, John C. ; Cheaito, Ramez ; Gaskins, John T. ; Peter Yang, C.-Y. ; Constantin, Costel ; Jones, Reese E. ; Hopkins, Patrick E.

Applied physics letters, 2014-11, Vol.105 (20) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Correlation between non-ionizing energy loss and production rate of electron trap at E C − (0.12–0.20) eV formed in gallium nitride by various types of radiation
Correlation between non-ionizing energy loss and production rate of electron trap at E C − (0.12–0.20) eV formed in gallium nitride by various types of radiation
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Correlation between non-ionizing energy loss and production rate of electron trap at E C − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Aoshima, Keito ; Horita, Masahiro ; Suda, Jun

Applied physics letters, 2023-01, Vol.122 (1) [Periódico revisado por pares]

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5
Short channel effects on gallium nitride/gallium oxide nanowire transistors
Short channel effects on gallium nitride/gallium oxide nanowire transistors
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Short channel effects on gallium nitride/gallium oxide nanowire transistors

Yu, W ; Yeh, C ; Wang, L ; Wu, R ; Mao, H ; Lin, H ; Peng, H

Applied physics letters, 2012-10, Vol.101 (18), p.183501 [Periódico revisado por pares]

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Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared
Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared
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Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared

Vico Triviño, Noelia ; Minkov, Momchil ; Urbinati, Giulia ; Galli, Matteo ; Carlin, Jean-François ; Butté, Raphaël ; Savona, Vincenzo ; Grandjean, Nicolas

Applied physics letters, 2014-12, Vol.105 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation
Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation
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Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

Miller, Ruth A. ; So, Hongyun ; Chiamori, Heather C. ; Dowling, Karen M. ; Wang, Yongqiang ; Senesky, Debbie G.

Applied physics letters, 2017-12, Vol.111 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Defect reduction in ( 1 1 ¯ 00 ) m -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
Defect reduction in ( 1 1 ¯ 00 ) m -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
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Defect reduction in ( 1 1 ¯ 00 ) m -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

Haskell, B A ; Baker, T J ; McLaurin, M B ; Wu, F ; Fini, P T ; DenBaars, S P ; Speck, J S ; Nakamura, Shuji

Applied physics letters, 2005-03, Vol.86 (11), p.111917-111917-3 [Periódico revisado por pares]

American Institute of Physics

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9
Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000 1 ¯ )
Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000 1 ¯ )
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Spontaneous formation of quantum height manganese gallium islands and atomic chains on N-polar gallium nitride(000 1 ¯ )

Chinchore, Abhijit ; Wang, Kangkang ; Shi, Meng ; Liu, Yinghao ; Smith, Arthur R

Applied physics letters, 2012-02, Vol.100 (6), p.061602-061602-4 [Periódico revisado por pares]

American Institute of Physics

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10
Defect reduction in (112̄0) a -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
Defect reduction in (112̄0) a -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
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Defect reduction in (112̄0) a -plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

Haskell, B. A. ; Wu, F. ; Craven, M. D. ; Matsuda, S. ; Fini, P. T. ; Fujii, T. ; Fujito, K. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, Shuji

Applied physics letters, 2003-07, Vol.83 (4), p.644-646 [Periódico revisado por pares]

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