Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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History of Gallium-Nitride-Based Light-Emitting Diodes for IlluminationNakamura, Shuji ; Krames, M. R.Proceedings of the IEEE, 2013-10, Vol.101 (10), p.2211-2220 [Periódico revisado por pares]IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC-DC ConvertersReusch, David ; Strydom, JohanIEEE transactions on power electronics, 2015-09, Vol.30 (9), p.5151-5158 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply [Industry View]Mishra, Umesh K.Proceedings of the IEEE, 2023-04, Vol.111 (4), p.322-328 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Polarization Engineered Second Harmonic Generation Enhancement From Amorphous Silicon - Gallium Nitride Heterogeneous Resonant MetasurfaceMenon, Sruti ; Raghunathan, VarunIEEE journal of selected topics in quantum electronics, 2023-01, Vol.29 (1: Nonlinear Integrated Photonics), p.1-8 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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A monolithic gallium nitride‐based two‐phase synchronous buck converter with high operating frequencyLai, Longkun ; Jiang, Xin ; Li, Chenhao ; Luo, WeijunElectronics letters, 2023-04, Vol.59 (7), p.n/a [Periódico revisado por pares]WileyTexto completo disponível |
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6 |
Material Type: Artigo
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Systematic Study on Aluminum Composition Nonuniformity in Aluminum Gallium Nitride Metal-Semiconductor-Metal PhotodetectorsZhao, Yiming ; Donaldson, William RaymondIEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4441-4447 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devicesBicer, Mahmut ; Balram, Krishna C.IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2024-01, Vol.71 (1), p.1-1 [Periódico revisado por pares]United States: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor DevicesShvilberg, Liron ; Mimura, Takanori ; Xue, Haotian ; Wierer, Jonathan J. ; Paisley, Elizabeth A. ; Heinrich, Helge ; Ihlefeld, Jon F.IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3442-3446 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
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9 |
Material Type: Artigo
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Mitigation of Deane and Hamill phenomenon in gallium nitride high‐voltage power supply for electric propulsion system applicationDong, Minghai ; Li, Hui ; Yin, Shan ; See, Kye Yak ; Wu, Yingzhe ; Xin, XiongHigh voltage, 2024-02, Vol.9 (1), p.252-265 [Periódico revisado por pares]WileyTexto completo disponível |
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10 |
Material Type: Artigo
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GaN-on-Si Power Technology: Devices and ApplicationsChen, Kevin J. ; Haberlen, Oliver ; Lidow, Alex ; Chun Lin Tsai ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Yifeng WuIEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795 [Periódico revisado por pares]New York: IEEETexto completo disponível |