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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructuresMiwa, Kazuki ; Komatsu, Yuto ; Toguchi, Masachika ; Horikiri, Fumimasa ; Fukuhara, Noboru ; Narita, Yoshinobu ; Ichikawa, Osamu ; Isono, Ryota ; Tanaka, Takeshi ; Sato, TaketomoApplied physics express, 2020-02, Vol.13 (2), p.26508 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
| 2 |
Material Type: Artigo
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The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)Wang, Huimin ; Wei, Donghai ; Duan, Junfei ; Qin, Zhenzhen ; Qin, Guangzhao ; Yao, Yagang ; Hu, MingNanotechnology, 2021-03, Vol.32 (13), p.135401-135401 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
| 3 |
Material Type: Artigo
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Modeling, simulations, and optimizations of gallium oxide on gallium–nitride Schottky barrier diodesFang, Tao ; Li, Ling-Qi ; Xia, Guang-Rui ; Yu, Hong-YuChinese physics B, 2021-03, Vol.30 (2), p.27301-519 [Periódico revisado por pares]Department of Materials Engineering,the University of British Columbia,Vancouver,British Columbia,V6T1Z4,CanadaTexto completo disponível |
| 4 |
Material Type: Artigo
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Effect of indium doping on motions of a -prismatic edge dislocations in wurtzite gallium nitrideChen, Cheng ; Meng, Fanchao ; Ou, Pengfei ; Lan, Guoqiang ; Li, Bing ; Chen, Huicong ; Qiu, Qiwen ; Song, JunJournal of physics. Condensed matter, 2019-08, Vol.31 (31), p.315701-315701 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
| 5 |
Material Type: Artigo
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Review-Recent Advances and Challenges in Indium Gallium Nitride (InxGa1-xN) Materials for Solid State LightingKour, Ravinder ; Arya, Sandeep ; Verma, Sonali ; Singh, Anoop ; Mahajan, Prerna ; Khosla, AjitECS journal of solid state science and technology, 2020, Vol.9 (1), p.15011 [Periódico revisado por pares]The Electrochemical SocietyTexto completo disponível |
| 6 |
Material Type: Artigo
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Obtaining impact ionization-induced hole current by electrical measurements in gallium nitride metal–insulator–semiconductor high electron mobility transistorsYeh, Yu-Hsuan ; Chang, Ting-Chang ; Huang, Wei-Chen ; Zheng, Hao-Xuan ; Tsao, Yu-Ching ; Ciou, Fong-Min ; Lin, Yu-Shan ; Tan, Yung-Fang ; Sun, Li-Chuan ; Zhou, Kuan-Ju ; Chen, Kuan-Hsu ; Huang, Jen-WeiJournal of physics. D, Applied physics, 2021-07, Vol.54 (28), p.285104 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
| 7 |
Material Type: Artigo
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Design of High I on/I off Fin-Statistic Induction Transistor Based on Gallium NitrideZheng, Ziyang ; He, Wei ; Yang, Jiaying ; Huang, Hao ; Peng, FangxiJournal of physics. Conference series, 2023-09, Vol.2587 (1), p.12042 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
| 8 |
Material Type: Artigo
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Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] directionQiu, Qiu-Ling ; Yang, Shi-Xu ; Wu, Qian-Shu ; Li, Cheng-Lang ; Zhang, Qi ; Zhang, Jin-Wei ; Liu, Zhen-Xing ; Zhang, Yuan-Tao ; Liu, YangChinese physics B, 2022-03, Vol.31 (4), p.47103-672 [Periódico revisado por pares]Chinese Physical Society and IOP Publishing LtdTexto completo disponível |
| 9 |
Material Type: Ata de Congresso
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(Invited) Gallium Nitride on SiliconPiner, Edwin LECS transactions, 2017, Vol.77 (2), p.95-98, Article 95The Electrochemical Society, IncTexto completo disponível |
| 10 |
Material Type: Artigo
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Gallium nitride devices for power electronic applicationsBaliga, B JayantSemiconductor science and technology, 2013-07, Vol.28 (7), p.74011 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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