Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Multilayer Nanomagnet Threshold LogicZhou, Peng ; Gnoli, Luca ; Sadriwala, Mustafa M. ; Riente, Fabrizio ; Turvani, Giovanna ; Hassan, Naimul ; Hu, Xuan ; Vacca, Marco ; Friedman, Joseph S.IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1944-1949 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Ternary Logic Circuit Based on Negative Capacitance Field-Effect Transistors and Its Variation ImmunityHuang, Weixing ; Zhu, Huilong ; Zhang, Yongkui ; Wu, Zhenhua ; Huo, Qiang ; Xiao, Zhongrui ; Jia, KunpengIEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3678-3683 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)Hoffer, Barak ; Rana, Vikas ; Menzel, Stephan ; Waser, Rainer ; Kvatinsky, ShaharIEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3115-3122 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Tunable and Reconfigurable Logic Gates With Electrolyte-Gated Transistor Array Co-Integrated With Neuromorphic SynapsesYu, Ji-Man ; Lee, Chungryeol ; Han, Joon-Kyu ; Lee, Sang-Won ; Kim, Moon-Seok ; Im, Sung Gap ; Choi, Yang-KyuIEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4231-4235 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral VoltagesYang, An ; Jiang, YanfengIEEE transactions on electron devices, 2024-05, Vol.71 (5), p.3279-3284 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Boolean Logic Function Realized by Phase-Change Blade Type Random Access MemoryLian, Xiaojuan ; Wang, LeiIEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1849-1857 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Design and Simulation of Low-Power Logic Gates Based on Nanoscale Side-Contacted FEDJafari Touchaei, Behnam ; Manavizadeh, NeginIEEE transactions on electron devices, 2017-01, Vol.64 (1), p.306-311 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Effects of Temperature and Structural Geometries on a Skyrmion Logic GateTang, Chunli ; Alahmed, Laith ; Xu, Jihao ; Shen, Maokang ; Jones, Nicholas Alex ; Sadi, Mehdi ; Guin, Ujjwal ; Zhao, Wenfeng ; Li, PengIEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1706-1712 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)Huang, Wei-Chen ; Chen, Po-Hsun ; Chang, Ting-Chang ; Zheng, Hao-Xuan ; Yeh, Yu-Hsuan ; Wu, Chung-Wei ; Tan, Yung-Fang ; Lin, Shih-Kai ; Wu, Pei-Yu ; Sze, Simon. M.IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1811-1815 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Evaluation of NC-FinFET Based Subsystem-Level Logic CircuitsYou, Wei-Xiang ; Su, Pin ; Hu, ChenmingIEEE transactions on electron devices, 2019-04, Vol.66 (4), p.2004-2009 [Periódico revisado por pares]New York: IEEETexto completo disponível |