Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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RRAM Mirrored and RRAM-Transistor Hybrid Single Device Logic Gates Based on Two-Dimensional MaterialsShen, Yang ; Gao, Jintian ; Guo, Zhanfeng ; Liu, Yanming ; Tian, HeIEEE electron device letters, 2024-01, Vol.45 (1), p.88-91 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Ternary Full Adder Using Multi-Threshold Voltage Graphene BarristorsHeo, Sunwoo ; Kim, Sunmean ; Kim, Kiyung ; Lee, Hyeji ; Kim, So-Young ; Kim, Yun Ji ; Kim, Seung Mo ; Lee, Ho-In ; Lee, Segi ; Kim, Kyung Rok ; Kang, Seokhyeong ; Lee, Byoung HunIEEE electron device letters, 2018-12, Vol.39 (12), p.1948-1951 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Functionally Complete Boolean Logic in 1T1R Resistive Random Access MemoryZhuo-Rui Wang ; Yu-Ting Su ; Yi Li ; Ya-Xiong Zhou ; Tian-Jian Chu ; Kuan-Chang Chang ; Ting-Chang Chang ; Tsung-Ming Tsai ; Sze, Simon M. ; Xiang-Shui MiaoIEEE electron device letters, 2017-02, Vol.38 (2), p.179-182 [Periódico revisado por pares]IEEETexto completo disponível |
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4 |
Material Type: Artigo
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CMOS Ternary Logic With a Biristor Threshold Switch for Low Static Power ConsumptionHan, Joon-Kyu ; Yu, Ji-Man ; Nam, Seo-Yeon ; Choi, Yang-KyuIEEE electron device letters, 2022-07, Vol.43 (7), p.1005-1008 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Skyrmion-Based Ultra-Low Power Electric-Field-Controlled Reconfigurable (SUPER) Logic GateZhang, Zhizhong ; Zhu, Yuanzhi ; Zhang, Yue ; Zhang, Kun ; Nan, Jiang ; Zheng, Zhenyi ; Zhang, Youguang ; Zhao, WeishengIEEE electron device letters, 2019-12, Vol.40 (12), p.1984-1987 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Experimental Demonstration of Non-Volatile Boolean Logic With Field Configurable 1FeFET-1RRAM TechnologyDing, Zhetao ; Li, Xueyang ; Jin, Chengji ; Yu, Xiao ; Chen, Bing ; Cheng, Ran ; Han, GenquanIEEE electron device letters, 2024-06, Vol.45 (6), p.1084-1087 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Stateful Logic Operations in One-Transistor-One- Resistor Resistive Random Access Memory ArrayShen, Wensheng ; Huang, Peng ; Fan, Mengqi ; Han, Runze ; Zhou, Zheng ; Gao, Bin ; Wu, Huaqiang ; Qian, He ; Liu, Lifeng ; Liu, Xiaoyan ; Zhang, Xing ; Kang, JinfengIEEE electron device letters, 2019-09, Vol.40 (9), p.1538-1541 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory TechnologyHwang, Junghyeon ; Lim, Sehee ; Kim, Giuk ; Jung, Seong-Ook ; Jeon, SanghunIEEE electron device letters, 2022-07, Vol.43 (7), p.1049-1052 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit TorqueYang, Meiyin ; Luo, Jun ; Ji, Yang ; Zheng, Hou-Zhi ; Wang, Kaiyou ; Deng, Yongcheng ; Wu, Zhenhua ; Cai, Kaiming ; Edmonds, Kevin William ; Li, Yucai ; Sheng, Yu ; Wang, Sumei ; Cui, YanIEEE electron device letters, 2019-09, Vol.40 (9), p.1554-1557 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Quaternary logic circuits based on low-voltage programmable/erasable four-level organic transistor nonvolatile memoriesXu, Meili ; Xie, Wenfa ; Wang, WeiIEEE electron device letters, 2022-11, Vol.43 (11), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |