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Two-dimensional Mo1.33C MXene with divacancy ordering prepared from parent 3D laminate with in-plane chemical ordering
Two-dimensional Mo1.33C MXene with divacancy ordering prepared from parent 3D laminate with in-plane chemical ordering
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Two-dimensional Mo1.33C MXene with divacancy ordering prepared from parent 3D laminate with in-plane chemical ordering

Tao, Quanzheng ; Dahlqvist, Martin ; Lu, Jun ; Kota, Sankalp ; Meshkian, Rahele ; Halim, Joseph ; Palisaitis, Justinas ; Hultman, Lars ; Barsoum, Michel W. ; Persson, Per O.Å. ; Rosen, Johanna

Nature communications, 2017-04, Vol.8 (1), p.14949-14949, Article 14949 [Periódico revisado por pares]

London: Nature Publishing Group

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2
Use of cleaved wedge geometry for plan‐view transmission electron microscopy sample preparation
Use of cleaved wedge geometry for plan‐view transmission electron microscopy sample preparation
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Use of cleaved wedge geometry for plan‐view transmission electron microscopy sample preparation

Palisaitis, Justinas

Microscopy research and technique, 2021-12, Vol.84 (12), p.3182-3190 [Periódico revisado por pares]

Hoboken, USA: John Wiley & Sons, Inc

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3
Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition
Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition
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Direct epitaxial nanometer-thin InN of high structural quality on 4H–SiC by atomic layer deposition

Hsu, Chih-Wei ; Deminskyi, Petro ; Martinovic, Ivan ; Ivanov, Ivan G. ; Palisaitis, Justinas ; Pedersen, Henrik

Applied physics letters, 2020-08, Vol.117 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Effects of stoichiometry and individual layer thickness ratio on the quality of epitaxial CrBx/TiBy superlattice thin films
Effects of stoichiometry and individual layer thickness ratio on the quality of epitaxial CrBx/TiBy superlattice thin films
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Effects of stoichiometry and individual layer thickness ratio on the quality of epitaxial CrBx/TiBy superlattice thin films

Dorri, Samira ; Birch, Jens ; Eriksson, Fredrik ; Palisaitis, Justinas ; Persson, Per O.Å. ; Bakhit, Babak ; Hultman, Lars ; Ghafoor, Naureen

Materials & design, 2023-04, Vol.228, p.111842, Article 111842 [Periódico revisado por pares]

Elsevier Ltd

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5
Synthesis and Characterisation of Nanocomposite Mo-Fe-B Thin Films Deposited by Magnetron Sputtering
Synthesis and Characterisation of Nanocomposite Mo-Fe-B Thin Films Deposited by Magnetron Sputtering
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Synthesis and Characterisation of Nanocomposite Mo-Fe-B Thin Films Deposited by Magnetron Sputtering

Malinovskis, Paulius ; Fritze, Stefan ; Palisaitis, Justinas ; Lewin, Erik ; Patscheider, Jörg ; Persson, Per O Å ; Jansson, Ulf

Materials, 2021-04, Vol.14 (7), p.1739 [Periódico revisado por pares]

Switzerland: MDPI AG

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6
Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates
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Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

Serban, Elena ; Palisaitis, Justinas ; Junaid, Muhammad ; Tengdelius, Lina ; Högberg, Hans ; Hultman, Lars ; Persson, Per ; Birch, Jens ; Hsiao, Ching-Lien

Energies (Basel), 2017, Vol.10 (9), p.1322 [Periódico revisado por pares]

Basel: MDPI AG

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7
Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
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Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Chen, Jr-Tai ; Persson, Ingemar ; Nilsson, Daniel ; Hsu, Chih-Wei ; Palisaitis, Justinas ; Forsberg, Urban ; Persson, Per O. Å. ; Janzén, Erik

Applied physics letters, 2015-06, Vol.106 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy
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Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

Chen, Yen-Ting ; Araki, Tsutomu ; Palisaitis, Justinas ; Persson, Per O. Å. ; Chen, Li-Chyong ; Chen, Kuei-Hsien ; Olof Holtz, Per ; Birch, Jens ; Nanishi, Yasushi

Applied physics letters, 2013-11, Vol.103 (20), p.203108 [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Effects of N₂ Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
Effects of N₂ Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy
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Effects of N₂ Partial Pressure on Growth, Structure, and Optical Properties of GaN Nanorods Deposited by Liquid-Target Reactive Magnetron Sputter Epitaxy

Junaid, Muhammad ; Hsiao, Ching-Lien ; Chen, Yen-Ting ; Lu, Jun ; Palisaitis, Justinas ; Persson, Per Ola Åke ; Hultman, Lars ; Birch, Jens

Nanomaterials (Basel, Switzerland), 2018-04, Vol.8 (4), p.223 [Periódico revisado por pares]

Switzerland: MDPI AG

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10
Boridene: Two-dimensional Mo4/3B2-x with ordered metal vacancies obtained by chemical exfoliation
Boridene: Two-dimensional Mo4/3B2-x with ordered metal vacancies obtained by chemical exfoliation
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Boridene: Two-dimensional Mo4/3B2-x with ordered metal vacancies obtained by chemical exfoliation

Zhou, Jie ; Palisaitis, Justinas ; Halim, Joseph ; Dahlqvist, Martin ; Tao, Quanzheng ; Persson, Ingemar ; Hultman, Lars ; Persson, Per O Å ; Rosen, Johanna

Science (American Association for the Advancement of Science), 2021-08, Vol.373 (6556), p.801-805 [Periódico revisado por pares]

Washington: The American Association for the Advancement of Science

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