Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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11 |
Material Type: Artigo
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High-Performance SPR Sensor Using Wurtzite Nitride Semiconductors and TMDC: a Comparative StudyAshrafi, Tanwin M. S. ; Mohanty, GoutamPlasmonics (Norwell, Mass.), 2024, Vol.19 (2), p.817-823 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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12 |
Material Type: Artigo
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Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) NanowiresSibirev, N. V. ; Fedorov, V. V. ; Kirilenko, D. A. ; Ubiyvovk, E. V. ; Berdnikov, Y. S. ; Bolshakov, A. D. ; Mukhin, I. S.Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1862-1865 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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13 |
Material Type: Artigo
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Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopyPournia, Seyyedesadaf ; Linser, Samuel ; Jnawali, Giriraj ; Jackson, Howard E. ; Smith, Leigh M. ; Ameruddin, Amira ; Caroff, Philippe ; Wong-Leung, Jennifer ; Tan, Hark Hoe ; Jagadish, Chennupati ; Joyce, Hannah J.Nano research, 2020-06, Vol.13 (6), p.1586-1591 [Periódico revisado por pares]Beijing: Tsinghua University PressTexto completo disponível |
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14 |
Material Type: Artigo
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Electronic properties of wurtzite GaAs: A correlated structural, optical, and theoretical analysis of the same polytypic GaAs nanowireSenichev, Alexander ; Corfdir, Pierre ; Brandt, Oliver ; Ramsteiner, Manfred ; Breuer, Steffen ; Schilling, Jörg ; Geelhaar, Lutz ; Werner, PeterNano research, 2018-09, Vol.11 (9), p.4708-4721 [Periódico revisado por pares]Beijing: Tsinghua University PressTexto completo disponível |
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15 |
Material Type: Artigo
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Influence of AlN buffer layer on molecular beam epitaxy growth of wurtzite Al1−xScxN thin filmsAcharya, Shashidhara ; Chatterjee, Abhijit ; Seema ; Gupta, Mukul ; Saha, BivasBulletin of materials science, 2020-12, Vol.43 (1), p.316, Article 316 [Periódico revisado por pares]Bangalore: Indian Academy of SciencesTexto completo disponível |
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16 |
Material Type: Artigo
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Conversion efficiency of strained wurtzite InxGa1−x N/ZnSnN2 core/shell quantum dot solar cells under external electric fieldZhang, Jun ; Shi, Lei ; Yan, ZuweiOptoelectronics letters, 2023-03, Vol.19 (3), p.144-150Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
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17 |
Material Type: Artigo
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External electric and magnetic field effects on the polaron in a wurtzite nitride nanowire embedded in a nonpolar matrixAsatryan, Anna L. ; Movsisyan, Ashot H. ; Vartanian, Arshak L.The European physical journal. B, Condensed matter physics, 2021-03, Vol.94 (3), Article 70 [Periódico revisado por pares]Berlin/Heidelberg: Springer Berlin HeidelbergTexto completo disponível |
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18 |
Material Type: Artigo
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Novel mechanical behaviors of wurtzite CdSe nanowiresFu, Bing ; Chen, Li ; Xie, Yiqun ; Feng, Jie ; Ye, XiangJournal of nanoparticle research : an interdisciplinary forum for nanoscale science and technology, 2015-09, Vol.17 (9), p.1-15, Article 354Dordrecht: Springer NetherlandsTexto completo disponível |
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19 |
Material Type: Artigo
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Effect of Annealing Temperature on the Hardening Mechanism and Nano-mechanical Response of ZnO Single Crystal Wurtzite Phase: A Nanoscale AnalysisIslam, Bilal ; Sadiq, Muhammad ; Arif, Muhammad ; Haider, Fawad ; Ahmad, NaveedTransactions of the Indian Institute of Metals, 2023-11, Vol.76 (11), p.3049-3058New Delhi: Springer IndiaTexto completo disponível |
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20 |
Material Type: Artigo
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Unravelling a solution-based formation of single- crystalline kinked wurtzite nanowires: The case of MnSeYang, Xinyi ; Zhou, Bo ; Liu, Chuang ; Sui, Yongming ; Xiao, Guanjun ; Wei, Yingjin ; Wang, Xin ; Zou, BoNano research, 2017-07, Vol.10 (7), p.2311-2320 [Periódico revisado por pares]Beijing: Tsinghua University PressTexto completo disponível |