Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Development of a calibration chamber to evaluate the performance of low-cost particulate matter sensorsSayahi, T. ; Kaufman, D. ; Becnel, T. ; Kaur, K. ; Butterfield, A.E. ; Collingwood, S. ; Zhang, Y. ; Gaillardon, P.-E. ; Kelly, K.E.Environmental pollution (1987), 2019-12, Vol.255 (Pt 1), p.113131-113131, Article 113131 [Periódico revisado por pares]England: Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Heterogeneous integration of ReRAM crossbars in 180 nm CMOS BEoL processSandrini, J ; Thammasack, M ; Demirci, T ; Gaillardon, P-E ; Sacchetto, D ; De Micheli, G ; Leblebici, YMicroelectronic engineering, 2015-09, Vol.145, p.62-65 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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3-D Sequential Integration: A Key Enabling Technology for Heterogeneous Co-Integration of New Function With CMOSBatude, P. ; Ernst, T. ; Arcamone, J. ; Arndt, G. ; Coudrain, P. ; Gaillardon, P.-EIEEE journal on emerging and selected topics in circuits and systems, 2012-12, Vol.2 (4), p.714-722 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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4 |
Material Type: Ata de Congresso
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Design methodology for area and energy efficient OxRAM-based non-volatile flip-flopNataraj, M. ; Levisse, A. ; Giraud, B. ; Noel, J.-P ; Meinerzhagen, P. ; Portal, J. M. ; Gaillardon, P.-E2017 IEEE International Symposium on Circuits and Systems (ISCAS), 2017, p.1-4IEEETexto completo disponível |
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5 |
Material Type: Ata de Congresso
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Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETsDe Marchi, M. ; Sacchetto, D. ; Frache, S. ; Zhang, J. ; Gaillardon, P. ; Leblebici, Y. ; De Micheli, G.2012 International Electron Devices Meeting, 2012, p.8.4.1-8.4.4IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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FPGA Design with Double-Gate Carbon Nanotube TransistorsBen Jamaa, M. Haykel ; Gaillardon, Pierre-Emmanuel ; Frégonèse, Sebastien ; De Marchi, Michele ; De Micheli, Giovanni ; Zimmer, Thomas ; O'Connor, Ian ; Clermidy, FabienECS transactions, 2011, Vol.34 (1), p.1005-1010Electrochemical SocietyTexto completo disponível |
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7 |
Material Type: Artigo
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Matrix Nanodevice-Based Logic Architectures and Associated Functional Mapping MethodGaillardon, P.-E ; Clermidy, F ; O'Connor, I ; Liu, J ; Amadou, M ; Nicolescu, GACM journal on emerging technologies in computing systems, 2011-01, Vol.7 (1), p.1-23 [Periódico revisado por pares]ACMTexto completo disponível |
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8 |
Material Type: Artigo
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Heterogeneous integration of ReRAM crossbars in 180nm CMOS BEoL processSandrini, J. ; Thammasack, M. ; Demirci, T. ; Gaillardon, P.-E. ; Sacchetto, D. ; De Micheli, G. ; Leblebici, Y.Microelectronic engineering, 2015-09, Vol.145, p.62-65 [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Molecular electronics and reconfigurable logicO'Connor, I ; Liu, J ; Navarro, D ; Daviot, R ; Abouchi, N ; Gaillardon, P.E ; Clermidy, FInternational journal of nanotechnology., 2010-01, Vol.7 (4-8), p.367-382 [Periódico revisado por pares]Inderscience PublishersSem texto completo |
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10 |
Material Type: Artigo
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NSF Integrated Circuit Research, Education and Workforce Development Workshop Final ReportGuthaus, M ; Batten, C ; Brunvand, E ; Gaillardon, P E ; harris, D ; Manohar, R ; Mazumder, P ; Pileggi, L ; Stine, JarXiv.org, 2023-11Ithaca: Cornell University Library, arXiv.orgTexto completo disponível |