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Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration
Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration
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Investigation of the impact of plasma etching steps on the roughness of the fin FET channel sidewalls in the scheme of hetero-integration

Baranov, G. V. ; Milenin, A. P. ; Baklanov, M. P.

Russian microelectronics, 2016-05, Vol.45 (3), p.186-190 [Peer Reviewed Journal]

Moscow: Pleiades Publishing

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