Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
![]() |
New EEPROM concept for single bit operationRaguet, J.R. ; Laffont, R. ; Bouchakour, R. ; Bidal, V. ; Regnier, A. ; Mirabel, J.M.Solid-state electronics, 2008-10, Vol.52 (10), p.1525-1529 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
2 |
Material Type: Ata de Congresso
|
![]() |
A new adustable Schmitt Trigger based on Dual Control Gate-Floating Gate Transistor (DCG-FGT)Marzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J-M. ; Bouchakour, R.2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS), 2012, p.643-645IEEETexto completo disponível |
3 |
Material Type: Ata de Congresso
|
![]() |
DCG-FGT transistor: Retention study of Floating Gate chargeMarzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M ; Bouchakour, R.2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS), 2013, p.825-827IEEETexto completo disponível |
4 |
Material Type: Ata de Congresso
|
![]() |
PSP based DCG-FGT transistor Model: Full characterization procedureMarzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M ; Bouchakour, R.2012 International Symposium on Communications and Information Technologies (ISCIT), 2012, p.222-227IEEETexto completo disponível |
5 |
Material Type: Ata de Congresso
|
![]() |
PSP based DCG-FGT transistor model including characterization procedureMarzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J-M ; Bouchakour, R.2011 18th IEEE International Conference on Electronics, Circuits, and Systems, 2011, p.228-231IEEETexto completo disponível |
6 |
Material Type: Ata de Congresso
|
![]() |
A novel Dual-Control-Gate Floating Gate Transistor used in VCO applicationMarzaki, A. ; Bidal, V. ; Laffont, R. ; Rahajandraibe, W. ; Portal, J.-M ; Bergeret, E. ; Bouchakour, R.2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2IEEETexto completo disponível |