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1
Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses
Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses
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Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

Sandra Helena Messaddeq Máximo Siu Li; D Lezal; Younnes Messaddeq

Journal of Optoelectronics and Advanced Materials Bucharest v.4, n.2, p.375-380, 2002

Bucharest 2002

Item não circula. Consulte sua biblioteca.(Acessar)

2
Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses
Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses
Material Type:
Artigo 		Adicionar ao Meu Espaço

Relief grating induced by photo-expansion in Ga-Ge-S and Ga-Ge-As-S glasses

Sandra Helena Messaddeq Máximo Siu Li; D Lezal; Younnes Messaddeq

Journal of Optoelectronics and Advanced Materials Bucharest v.4, n.2, p.375-380, 2002

Bucharest 2002

Item não circula. Consulte sua biblioteca.(Acessar)

3
Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses
Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses
Material Type:
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Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses

Sandra Helena Messaddeq Máximo Siu Li; D Lezal; Younnes Messaddeq; S J L Ribeiro; L F C Oliveira; João Manuel Domingos de Almeida Rollo

Journal of Optoelectronics and Advanced Materials Bucharest v.3, n.2, p.295-302, 2001

Bucharest 2001

Localização: EESC - Esc. Engenharia de São Carlos    (PROD-004669 ) e outros locais(Acessar)

4
Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses
Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses
Material Type:
Artigo 		Adicionar ao Meu Espaço

Raman investigation of structural photoinduced irreversible changes of 'Ga UND.10''Ge IND.25''S IND.65' chalcogenide glasses

Sandra Helena Messaddeq Máximo Siu Li; D Lezal; Younnes Messaddeq; S J L Ribeiro; L F C Oliveira; João Manuel Domingos de Almeida Rollo

Journal of Optoelectronics and Advanced Materials Bucharest v.3, n.2, p.295-302, 2001

Bucharest 2001

Localização: IFSC - Inst. Física de São Carlos    (PROD007333 )(Acessar)

5
First-principles study of sulfur passivation of GaP(001) surface at one-monolayer coverage
First-principles study of sulfur passivation of GaP(001) surface at one-monolayer coverage
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First-principles study of sulfur passivation of GaP(001) surface at one-monolayer coverage

Li, D F ; Xiao, H Y ; Zu, X T ; Liu, K Z

Journal of Optoelectronics and Advanced Materials, 2008-10, Vol.10 (10), p.2732-2737 [Periódico revisado por pares]

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6
High crystallinity multi wall carbon nanotubes synthesized by inductive heating CCVD
High crystallinity multi wall carbon nanotubes synthesized by inductive heating CCVD
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High crystallinity multi wall carbon nanotubes synthesized by inductive heating CCVD

Biris, A R ; Lupu, D ; Misan, I ; Dervishi, E ; Li, Z ; Xu, Y ; Trigwell, S ; Biris, A S

Journal of Optoelectronics and Advanced Materials, 2008-09, Vol.10 (9), p.2311-2315 [Periódico revisado por pares]

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7
Improved SFS 3D measurement based on neural network
Improved SFS 3D measurement based on neural network
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Improved SFS 3D measurement based on neural network

Song, Limei ; Wang, Danv ; Su, Hong ; Li, Xiaoxia ; Liu, Xianyong

Journal of Optoelectronics and Advanced Materials, 2006-02, Vol.8 (1), p.285-290 [Periódico revisado por pares]

Texto completo disponível

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Deste Autor:

  1. Messaddeq, Y
  2. Siu Li, M
  3. Lezal, D
  4. Messaddeq, S
  5. Oliveira, L

Neste Assunto:

  1. Matéria Condensada
  2. Physics, Applied
  3. Optics
  4. Physical Sciences
  5. Physics

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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