skip to main content
Idioma:
Refinado por: assunto: Engineering remover assunto: Materials Science remover assunto: Physical Sciences remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
MEASURING DROPLET SIZE OF AGRICULTURAL SPRAY NOZZLES-MEASUREMENT DISTANCE AND AIRSPEED EFFECTS
MEASURING DROPLET SIZE OF AGRICULTURAL SPRAY NOZZLES-MEASUREMENT DISTANCE AND AIRSPEED EFFECTS
Material Type:
Artigo 		Adicionar ao Meu Espaço

MEASURING DROPLET SIZE OF AGRICULTURAL SPRAY NOZZLES-MEASUREMENT DISTANCE AND AIRSPEED EFFECTS

Fritz, Bradley K. ; Hoffmann, W. Clint ; Bagley, W. E. ; Kruger, Greg R. ; Czaczyk, Zbigniew ; Henry, Ryan S.

Atomization and sprays, 2014, Vol.24 (9), p.747-760 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
2
Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers
Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers
Material Type:
Artigo 		Adicionar ao Meu Espaço

Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers

MACHKAOUTSAN, V ; VERHEYEN, P ; HORIGUCHI, N ; KERNER, C ; HOFFMANN, T ; GRANNEMAN, E ; VANDERVORST, W ; ABSIL, P ; THOMAS, S. G ; BAUER, M ; ZHANG, Y ; KOELLING, S ; FRANQUET, A ; VANORMELINGEN, K ; LOO, R ; KIM, C. S ; LAUWERS, A

Microelectronic engineering, 2010-03, Vol.87 (3), p.306-310 [Periódico revisado por pares]

Amsterdam: Elsevier

Texto completo disponível

Citações Citado por
3
High-mobility Si1−xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
High-mobility Si1−xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

High-mobility Si1−xGex-channel PFETs: Layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths

Eneman, G ; Yamaguchi, S ; Ortolland, C ; Takeoka, S ; Witters, L ; Chiarella, T ; Favia, P ; Hikavyy, A ; Mitard, J ; Kobayashi, M ; Krom, R ; Bender, H ; Tseng, J ; Wang, W ; Vandervorst, W ; Loo, R ; Absil, P P ; Biesemans, S ; Hoffmann, T

2010 Symposium on VLSI Technology, 2010, p.41-42

IEEE

Texto completo disponível

Citações Citado por
4
Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Dopant and carrier profiling in FinFET-based devices with sub-nanometer resolution

Mody, J. ; Kambham, A.K. ; Zschatzsch, G. ; Schatzer, P. ; Chiarella, T. ; Collaert, N. ; Witters, L. ; Jurczak, M. ; Horiguchi, N. ; Gilbert, M. ; Eyben, P. ; Kolling, S ; Schulze, A. ; Hoffmann, T-Y. ; Vandervorst, W.

2010 Symposium on VLSI Technology, 2010, p.195-196

IEEE

Texto completo disponível

Citações Citado por
5
Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation
Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation

Zschatzsch, G ; Vandervorst, W ; Hoffmann, T ; Goossens, J ; Everaert, J-L ; del Agua Borniquel, J I ; Poon, T

AIP conference proceedings, 2008, Vol.1066 (1), p.461-464 [Periódico revisado por pares]

United States

Sem texto completo

Citações Citado por
6
Ion-implantation-based low-cost Hk/MG process for CMOS low-power application
Ion-implantation-based low-cost Hk/MG process for CMOS low-power application
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Ion-implantation-based low-cost Hk/MG process for CMOS low-power application

Ortolland, C ; Sahhaf, S ; Srividya, V ; Degraeve, R ; Saino, K ; Kim, C S ; Gilbert, M ; Kauerauf, T ; Cho, M J ; Dehan, M ; Schram, T ; Togo, M ; Horiguchi, N ; Groeseneken, G ; Biesemans, S ; Absil, P P ; Vandervorst, W ; Gealy, D ; Hoffmann, T

2010 Symposium on VLSI Technology, 2010, p.185-186

IEEE

Texto completo disponível

Citações Citado por
7
FinFETs and Their Futures
FinFETs and Their Futures
Material Type:
Capítulo de Livro 		Adicionar ao Meu Espaço

FinFETs and Their Futures

Horiguchi, N. ; Parvais, B. ; Chiarella, T. ; Collaert, N. ; Veloso, A. ; Rooyackers, R. ; Verheyen, P. ; Witters, L. ; Redolfi, A. ; De Keersgieter, A. ; Brus, S. ; Zschaetzsch, G. ; Ercken, M. ; Altamirano, E. ; Locorotondo, S. ; Demand, M. ; Jurczak, M. ; Vandervorst, W. ; Hoffmann, T. ; Biesemans, S.

Semiconductor-On-Insulator Materials for Nanoelectronics Applications, p.141-153 [Periódico revisado por pares]

Berlin, Heidelberg: Springer Berlin Heidelberg

Sem texto completo

Citações Citado por
8
A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure

Morl, L. ; Bornholdt, C. ; Hoffmann, D. ; Matzen, K. ; Mekonnen, G.G. ; Reier, F.W.

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.403-406

IEEE

Texto completo disponível

Citações Citado por
9
Verdet constant and its dispersion in optical glasses
Verdet constant and its dispersion in optical glasses
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Verdet constant and its dispersion in optical glasses

Westenberger, Gerhard ; Hoffmann, Hans J ; Jochs, Werner W ; Przybilla, Gudrun

SPIE 1991

Texto completo disponível

Citações Citado por
10
Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching

Reier, F.W. ; Bach, H.-G. ; Bornholdt, C. ; Hoffmann, D. ; Morl, L. ; Weinert, C.M.

Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.222-225

IEEE

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Recursos Online (11)
  2. Revistas revisadas por pares (5)

Refinar Meus Resultados

Tipo de Recurso 

  1. Anais de Congresso  (8)
  2. Artigos  (4)
  3. Book Chapters  (1)
  4. Mais opções open sub menu

Data de Publicação 

De até
Refinar
  1. Antes de1991  (2)
  2. 1991Até1995  (2)
  3. 1996Até1997  (2)
  4. 1998Até2010  (6)
  5. Após 2010  (2)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.