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Refinado por: assunto: Physics And Astronomy remover
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1
Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness
Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness
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Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness

Sokolova, Z. N. ; Pikhtin, N. A ; Slipchenko, S. O. ; Asryan, L. V.

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.115-121 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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2
Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide
Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide
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Blocking-Layer Design for the Suppression of Parasitic Recombination in High-Power Laser Diodes with a GaAs Waveguide

Muretova, M. E. ; Zubov, F. I. ; Asryan, L. V. ; Shernyakov, Yu. M. ; Maximov, M. V. ; Zhukov, A. E.

Semiconductors (Woodbury, N.Y.), 2022-04, Vol.56 (4), p.246-252 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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3
Capture of charge carriers and output power of a quantum well laser
Capture of charge carriers and output power of a quantum well laser
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Capture of charge carriers and output power of a quantum well laser

Sokolova, Z. N. ; Tarasov, I. S. ; Asryan, L. V.

Semiconductors (Woodbury, N.Y.), 2011-11, Vol.45 (11), p.1494-1500 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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4
Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser
Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser
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Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser

Sokolova, Z. N. ; Tarasov, I. S. ; Asryan, L. V.

Semiconductors (Woodbury, N.Y.), 2012-08, Vol.46 (8), p.1044-1050 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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5
Analysis of the profile curves of the menisci for the crystal growth by the edge-defined film-fed growth (Stepanov) technique
Analysis of the profile curves of the menisci for the crystal growth by the edge-defined film-fed growth (Stepanov) technique
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Analysis of the profile curves of the menisci for the crystal growth by the edge-defined film-fed growth (Stepanov) technique

Rossolenko, S. N. ; Kurlov, V. N. ; Asryan, A. A.

Bulletin of the Russian Academy of Sciences. Physics, 2009-10, Vol.73 (10), p.1320-1323 [Periódico revisado por pares]

Heidelberg: Allerton Press, Inc

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6
Analysis of the features of meniscus profile curves during growth of base-faceted sapphire ribbons
Analysis of the features of meniscus profile curves during growth of base-faceted sapphire ribbons
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Analysis of the features of meniscus profile curves during growth of base-faceted sapphire ribbons

Asryan, A. A. ; Rossolenko, S. N. ; Kurlov, V. N. ; Krymov, V. M.

Bulletin of the Russian Academy of Sciences. Physics, 2009-10, Vol.73 (10), p.1333-1337 [Periódico revisado por pares]

Heidelberg: Allerton Press, Inc

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7
Parasitic Recombination in a Laser with Asymmetric Barrier Layers
Parasitic Recombination in a Laser with Asymmetric Barrier Layers
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Parasitic Recombination in a Laser with Asymmetric Barrier Layers

Zubov, F. I. ; Muretova, M. E. ; Payusov, A. S. ; Maximov, M. V. ; Zhukov, A. E. ; Asryan, L. V.

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.366-373 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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8
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
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Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling

Asryan, L. V. ; Zubov, F. I. ; Kryzhanovskaya, N. V. ; Maximov, M. V. ; Zhukov, A. E.

Semiconductors (Woodbury, N.Y.), 2016-10, Vol.50 (10), p.1362-1368 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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9
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers
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Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers

Sokolova, Z. N. ; Veselov, D. A. ; Pikhtin, N. A. ; Tarasov, I. S. ; Asryan, L. V.

Semiconductors (Woodbury, N.Y.), 2017-07, Vol.51 (7), p.959-964 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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10
Specific features of waveguide recombination in laser structures with asymmetric barrier layers
Specific features of waveguide recombination in laser structures with asymmetric barrier layers
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Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Polubavkina, Yu. S. ; Zubov, F. I. ; Moiseev, E. I. ; Kryzhanovskaya, N. V. ; Maximov, M. V. ; Semenova, E. S. ; Yvind, K. ; Asryan, L. V. ; Zhukov, A. E.

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.254-259 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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