skip to main content
Idioma:
Mostrar Somente
Refinado por: assunto: Physics, Applied remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys
Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys
Material Type:
Artigo 		Adicionar ao Meu Espaço

Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys

Pavelescu, E.-M. ; Ligor, O. ; Occena, J. ; Ticoş, C. ; Matei, A. ; Gavrilă, R. L. ; Yamane, K. ; Wakahara, A. ; Goldman, R. S.

Applied physics letters, 2020-10, Vol.117 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Citações Citado por
2
Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy
Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy

Fleischman, Z. ; Munasinghe, C. ; Steckl, A. J. ; Wakahara, A. ; Zavada, J. ; Dierolf, V.

Applied physics. B, Lasers and optics, 2009-11, Vol.97 (3), p.607-618 [Periódico revisado por pares]

Berlin/Heidelberg: Springer-Verlag

Texto completo disponível

Citações Citado por
3
Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy
Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Direct observation of N-(group V) bonding defects in dilute nitride semiconductors using hard x-ray photoelectron spectroscopy

Ishikawa, F ; Fuyuno, S ; Higashi, K ; Kondow, M ; Machida, M ; Oji, H ; Son, J.-Y ; Trampert, A ; Umeno, K ; Furukawa, Y ; Wakahara, A

Applied physics letters, 2011-03, Vol.98 (12), p.121915-121915-3 [Periódico revisado por pares]

United States: American Institute of Physics

Texto completo disponível

Citações Citado por
4
Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments
Material Type:
Artigo 		Adicionar ao Meu Espaço

Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments

Dagnelund, D ; Buyanova, I A ; Wang, X J ; Chen, W M ; Utsumi, A ; Furukawa, Y ; Wakahara, A ; Yonezu, H

Journal of applied physics, 2008-03, Vol.103 (6), p.063519-063519-8 [Periódico revisado por pares]

United States: American Institute of Physics

Texto completo disponível

Citações Citado por
5
Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction
Material Type:
Artigo 		Adicionar ao Meu Espaço

Evidence for a phosphorus-related interfacial defect complex at a GaP/GaNP heterojunction

Dagnelund, D. ; Vorona, I. P. ; Vlasenko, L. S. ; Wang, X. J. ; Utsumi, A. ; Furukawa, Y. ; Wakahara, A. ; Yonezu, H. ; Buyanova, I. A. ; Chen, W. M.

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (11), p.115334, Article 115334 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
6
Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si
Material Type:
Artigo 		Adicionar ao Meu Espaço

Evaluation of optical quality and defect properties of GaNxP1−x alloys lattice matched to Si

Izadifard, M. ; Bergman, J. P. ; Vorona, I. ; Chen, W. M. ; Buyanova, I. A. ; Utsumi, A. ; Furukawa, Y. ; Moon, S. ; Wakahara, A. ; Yonezu, H.

Applied physics letters, 2004-12, Vol.85 (26), p.6347-6349 [Periódico revisado por pares]

Texto completo disponível

Citações Citado por
7
Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy
Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy

Wakahara, Akihiro ; Genba, Jun ; Yoshida, Akira ; Saiki, Hisao

Journal of crystal growth, 2000-12, Vol.221 (1), p.305-310 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

Texto completo disponível

Citações Citado por
8
Crystal growth and characterization of rare-earth doped Na2CaLu2F10
Crystal growth and characterization of rare-earth doped Na2CaLu2F10
Material Type:
Ata de Congresso 		Adicionar ao Meu Espaço

Crystal growth and characterization of rare-earth doped Na2CaLu2F10

Wakahara, S. ; Furuya, Y. ; Yanagida, T. ; Yokota, Y. ; Pejchal, J. ; Sugiyama, M. ; Kawaguchi, N. ; Totsuka, D. ; Yoshikawa, A.

2011 IEEE Nuclear Science Symposium Conference Record, 2011, p.1586-1590

IEEE

Texto completo disponível

Citações Citado por
9
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix
Material Type:
Artigo 		Adicionar ao Meu Espaço

Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix

ROUVIMOV, S ; LILIENTAL-WEBER, Z ; SWIDER, W ; WASHBURN, J ; WEBER, E. R ; SASAKI, A ; WAKAHARA, A ; FURKAWA, Y ; ABE, T ; NODA, S

Journal of electronic materials, 1998-05, Vol.27 (5), p.427-432 [Periódico revisado por pares]

New York, NY: Institute of Electrical and Electronics Engineers

Texto completo disponível

Citações Citado por
10
Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer
Material Type:
Artigo 		Adicionar ao Meu Espaço

Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer

Lin, X. W. ; Washburn, J. ; Liliental-Weber, Z. ; Weber, E. R. ; Sasaki, A. ; Wakahara, A. ; Nabetani, Y.

Applied physics letters, 1994-09, Vol.65 (13), p.1677-1679 [Periódico revisado por pares]

United States

Texto completo disponível

Citações Citado por

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Mostrar Somente

  1. Revistas revisadas por pares (9)

Refinar Meus Resultados

Tipo de Recurso 

  1. Artigos  (10)
  2. Anais de Congresso  (1)
  3. Mais opções open sub menu

Data de Publicação 

De até
Refinar
  1. Antes de1995  (2)
  2. 1995Até1999  (2)
  3. 2000Até2007  (2)
  4. 2008Até2010  (3)
  5. Após 2010  (3)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.