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1 |
Material Type: Artigo
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Nanoindentation and near-field spectroscopy of single semiconductor quantum dotsMintairov, A. M. ; Sun, K. ; Merz, J. L. ; Li, C. ; Vlasov, A. S. ; Vinokurov, D. A. ; Kovalenkov, O. V. ; Tokranov, V. ; Oktyabrsky, S.Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (15), Article 155306 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Raman investigation of low temperature AlGaAs/GaAs(1 0 0) heterostructuresSeredin, P.V. ; Glotov, A.V. ; Domashevskaya, E.P. ; Arsentyev, I.N. ; Vinokurov, D.A. ; Tarasov, I.S.Physica. B, Condensed matter, 2010-06, Vol.405 (12), p.2694-2696 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
3 |
Material Type: Artigo
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CL and dark field TEM analysis of composition change at interfaces in InGaP/GaAs junctions grown by MOCVDFrigeri, C. ; Shakhmin, A. A. ; Vinokurov, D. A. ; Zamoryanskaya, M. V.Physica status solidi. C, 2011-04, Vol.8 (4), p.1269-1272 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
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Material Type: Artigo
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Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe MicroanalysisZamoryanskaya, M.V. ; Kuznetsova, Ya.V. ; Popova, T.B. ; Shakhmin, A.A. ; Vinokurov, D.A. ; Trofimov, A.N.Journal of electronic materials, 2010-06, Vol.39 (6), p.620-624 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
5 |
Material Type: Artigo
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Ultralow internal optical loss in separate-confinement quantum-well laser heterostructuresSlipchenko, S. O. ; Vinokurov, D. A. ; Pikhtin, N. A. ; Sokolova, Z. N. ; Stankevich, A. L. ; Tarasov, I. S. ; Alferov, Zh. I.Semiconductors (Woodbury, N.Y.), 2004-01, Vol.38 (12), p.1430-1439 [Periódico revisado por pares]Texto completo disponível |
6 |
Material Type: Artigo
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High-power laser diodes based on asymmetric separate-confinement heterostructuresVinokurov, D. A. ; Zorina, S. A. ; Kapitonov, V. A. ; Murashova, A. V. ; Nikolaev, D. N. ; Stankevich, A. L. ; Khomylev, M. A. ; Shamakhov, V. V. ; Leshko, A. Yu ; Lyutetskii, A. V. ; Nalyot, T. A. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Sokolova, Z. N. ; Fetisova, N. V. ; Tarasov, I. S.Semiconductors (Woodbury, N.Y.), 2005-03, Vol.39 (3), p.370-373 [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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XRD, AFM and IR investigations of ordered AlGaAs2 phase in epitaxial AlxGa1-xAs/GaAs (100) heterostructuresDomashevskaya, E. P. ; Seredin, P. V. ; Lukin, A. N. ; Bityutskaya, L. A. ; Grechkina, M. V. ; Arsentyev, I. N. ; Vinokurov, D. A. ; Tarasov, I. S.Surface and interface analysis, 2006-04, Vol.38 (4), p.828-832 [Periódico revisado por pares]Chichester, UK: John Wiley & Sons, LtdTexto completo disponível |
8 |
Material Type: Artigo
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Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layersSeredin, P. V. ; Domashevskaya, É. P. ; Lukin, A. N. ; Arsent’ev, I. N. ; Vinokurov, D. A. ; Tarasov, I. S.Semiconductors (Woodbury, N.Y.), 2008-09, Vol.42 (9), Article 1055 [Periódico revisado por pares]Dordrecht: SP MAIK Nauka/InterperiodicaTexto completo disponível |
9 |
Material Type: Artigo
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Optical and structural properties of ingaasp miscibility-gap solid solutions grown by MOVPE on GaAs(001) substratesVavilova, L. S. ; Vinokurov, D. A. ; Kapitonov, V. A. ; Murashova, A. V. ; Nevedomskii, V. N. ; Poletaev, N. K. ; Sitnikova, A. A. ; Tarasov, I. S. ; Shamakhov, V. V.Semiconductors (Woodbury, N.Y.), 2003-09, Vol.37 (9), p.1080-1084 [Periódico revisado por pares]New York: Springer Nature B.VTexto completo disponível |
10 |
Material Type: Artigo
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Structural features and surface morphology of AlxGayIn1−x−yAszP1−z/GaAs(100) heterostructuresSeredin, P.V. ; Glotov, A.V. ; Domashevskaya, E.P. ; Arsentyev, I.N. ; Vinokurov, D.A. ; Tarasov, I.S.Applied surface science, 2013-02, Vol.267, p.181-184 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |