Photoluminescence of heterostructures with highly strained Ga0.76In0.24As quantum wells separated by GaAsyP1−y compensating barriers

Shamakhov, V. V. ; Vinokurov, D. A. ; Stankevich, A. L. ; Kapitonov, V. A. ; Zorina, S. A. ; Nikolaev, D. N. ; Murashova, A. V. ; Bondarev, A. D. ; Tarasov, I. S.

Texto completo disponível

Photoluminescence of GaAsP/GaInAsP Type-II heterojunctions

Vinokurov, D. A. ; Zorina, S. A. ; Kapitonov, V. A. ; Murashova, A. V. ; Nikolaev, D. N. ; Stankevich, A. L. ; Trukan, M. K. ; Shamakhov, V. V. ; Tarasov, I. S.

Texto completo disponível

Study of non-diffracting light beams from broad-stripe edge-emitting semiconductor lasers

Sokolovskii, G. S. ; Dudelev, V. V. ; Losev, S. N. ; Deryagin, A. G. ; Vinokurov, D. A. ; Lyutetskiĭ, A. V. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Tarasov, I. S. ; Zolotovskaya, S. A. ; Rafailov, E. U. ; Kuchinskii, V. I. ; Sibbett, W.

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

Vinokurov, D. A. ; Kapitonov, V. A. ; Kovalenkov, O. V. ; Livshits, D. A. ; Tarasov, I. S.

Texto completo disponível

Switching between generation of two quantum states in quantum-well laser diodes

Sokolovskiĭ, G. S. ; Vinokurov, D. A. ; Deryagin, A. G. ; Dudelev, V. V. ; Kuchinskiĭ, V. I. ; Losev, S. N. ; Lyutetskii, A. V. ; Pikhtin, N. A. ; Slipchenko, S. O. ; Sokolova, Z. N. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm)

Vinokurov, D. A. ; Deryagin, A. G. ; Dyudelev, V. V. ; Kuchinskiĭ, V. I. ; Lyutetskiĭ, A. V. ; Pikhtin, N. A. ; Sokolovskiĭ, G. S. ; Stankevich, A. L. ; Tarasov, I. S.

Dordrecht: SP MAIK Nauka/Interperiodica

Texto completo disponível

Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

Bhattachar-yya, D. ; Vinokurov, D. A. ; Gusinskii, G. M. ; Elyukhin, V. A. ; Kovalenkov, O. V. ; Kyutt, R. N. ; Marsh, J. H. ; Naidenov, V. O. ; Portnoi, E. L.

Texto completo disponível

Studying the characteristics of pulse-pumped semiconductor 1060-nm lasers based on asymmetric heterostructures with ultrathick waveguides

Vinokurov, D. A. ; Kapitonov, V. A. ; Lyutetskiĭ, A. V. ; Nikolaev, D. N. ; Pikhtin, N. A. ; Rozhkov, A. V. ; Rudova, N. A. ; Slipchenko, S. O. ; Stankevich, A. L. ; Fetisova, N. V. ; Khomylev, M. A. ; Shamakhov, V. V. ; Borshchev, K. S. ; Tarasov, I. S.

Texto completo disponível

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

Vinokurov, D. A. ; Zorina, S. A. ; Kapitonov, V. A. ; Nikolaev, D. N. ; Stankevich, A. L. ; Shamakhov, V. V. ; Tarasov, I. S.

Texto completo disponível

Investigation of strained InxGa1−x As/InP quantum wells fabricated by metalorganic compound hydride epitaxy

Bondarev, A. D. ; Vinokurov, D. A. ; Kapitonov, V. A. ; Kovalenkov, O. V. ; Sokolova, Z. N. ; Tarasov, I. S.

Texto completo disponível