Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Crystal Phase Engineering in Single InAs NanowiresDick, Kimberly A ; Thelander, Claes ; Samuelson, Lars ; Caroff, PhilippeNano letters, 2010-09, Vol.10 (9), p.3494-3499 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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2 |
Material Type: Artigo
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InAs Nanowire Transistors with Multiple, Independent Wrap-Gate SegmentsBurke, A. M ; Carrad, D. J ; Gluschke, J. G ; Storm, K ; Fahlvik Svensson, S ; Linke, H ; Samuelson, L ; Micolich, A. PNano letters, 2015-05, Vol.15 (5), p.2836-2843 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursorsThelander, C ; Dick, K A ; Borgström, M T ; Fröberg, L E ; Caroff, P ; Nilsson, H A ; Samuelson, LNanotechnology, 2010-05, Vol.21 (20), p.205703-205703 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Nanowire Arrays Defined by Nanoimprint LithographyMårtensson, Thomas ; Carlberg, Patrick ; Borgström, Magnus ; Montelius, Lars ; Seifert, Werner ; Samuelson, LarsNano letters, 2004-04, Vol.4 (4), p.699-702 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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5 |
Material Type: Artigo
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Giant, Level-Dependent g Factors in InSb Nanowire Quantum DotsNilsson, Henrik A ; Caroff, Philippe ; Thelander, Claes ; Larsson, Marcus ; Wagner, Jakob B ; Wernersson, Lars-Erik ; Samuelson, Lars ; Xu, H. QNano letters, 2009-09, Vol.9 (9), p.3151-3156 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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6 |
Material Type: Artigo
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Precursor evaluation for in situ InP nanowire dopingBorgström, M T ; Norberg, E ; Wickert, P ; Nilsson, H A ; Trägårdh, J ; Dick, K A ; Statkute, G ; Ramvall, P ; Deppert, K ; Samuelson, LNanotechnology, 2008-11, Vol.19 (44), p.445602-445602 (6) [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than LithographyStorm, Kristian ; Nylund, Gustav ; Samuelson, Lars ; Micolich, Adam PNano letters, 2012-01, Vol.12 (1), p.1-6 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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Formation of nanogaps in InAs nanowires by selectively etching embedded InP segmentsSchukfeh, M I ; Storm, K ; Hansen, A ; Thelander, C ; Hinze, P ; Beyer, A ; Weimann, T ; Samuelson, L ; Tornow, MNanotechnology, 2014-11, Vol.25 (46), p.465306-465306 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire TransistorsCarrad, Damon J ; Burke, Adam M ; Lyttleton, Roman W ; Joyce, Hannah J ; Tan, Hark Hoe ; Jagadish, Chennupati ; Storm, Kristian ; Linke, Heiner ; Samuelson, Lars ; Micolich, Adam PNano letters, 2014-01, Vol.14 (1), p.94-100 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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10 |
Material Type: Artigo
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Embedded sacrificial AlAs segments in GaAs nanowires for substrate reuseJafari Jam, R ; Beech, Jason P ; Zeng, Xulu ; Johansson, Jonas ; Samuelson, Lars ; Pettersson, Håkan ; Borgström, Magnus TNanotechnology, 2020-05, Vol.31 (20), p.204002-204002 [Periódico revisado por pares]EnglandTexto completo disponível |