Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Stress evolution during metalorganic chemical vapor deposition of GaNHearne, S. ; Chason, E. ; Han, J. ; Floro, J. A. ; Figiel, J. ; Hunter, J. ; Amano, H. ; Tsong, I. S. T.Applied Physics Letters, 1999-01, Vol.74 (3), p.356-358 [Periódico revisado por pares]United StatesTexto completo disponível |
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2 |
Material Type: Artigo
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Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layersYAMADA-TAKAMURA, Yukiko ; WANG, Z. T ; FUJIKAWA, Y ; SAKURAI, T ; XUE, Q. K ; TOLLE, J ; LIU, P.-L ; CHIZMESHYA, A. V. G ; KOUVETAKIS, J ; TSONG, I. S. TPhysical review letters, 2005-12, Vol.95 (26), p.266105.1-266105.4 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
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3 |
Material Type: Artigo
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Atomic structures of 6HSiC (0001) and (0001̄) surfacesLi, L. ; Tsong, I.S.T.Surface science, 1996-05, Vol.351 (1), p.141-148 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layerTolle, J. ; Roucka, R. ; Tsong, I. S. T. ; Ritter, C. ; Crozier, P. A. ; Chizmeshya, A. V. G. ; Kouvetakis, J.Applied physics letters, 2003-04, Vol.82 (15), p.2398-2400 [Periódico revisado por pares]Texto completo disponível |
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5 |
Material Type: Artigo
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Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructuresHearne, S. J. ; Han, J. ; Lee, S. R. ; Floro, J. A. ; Follstaedt, D. M. ; Chason, E. ; Tsong, I. S. T.Applied physics letters, 2000-03, Vol.76 (12), p.1534-1536 [Periódico revisado por pares]United StatesTexto completo disponível |
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6 |
Material Type: Artigo
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Structures of GaN(0001)- ( 2 × 2 ) , - ( 4 × 4 ) , and - ( 5 × 5 ) Surface ReconstructionsXue, Qi-Kun ; Xue, Q. Z. ; Bakhtizin, R. Z. ; Hasegawa, Y. ; Tsong, I. S. T. ; Sakurai, T. ; Ohno, T.Physical review letters, 1999-04, Vol.82 (15), p.3074-3077 [Periódico revisado por pares]Texto completo disponível |
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7 |
Material Type: Artigo
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Growth of self-assembled GaN quantum dots via the vapor–liquid–solid mechanismHu, C.-W. ; Bell, A. ; Ponce, F. A. ; Smith, D. J. ; Tsong, I. S. T.Applied physics letters, 2002-10, Vol.81 (17), p.3236-3238 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Nucleation and growth of epitaxial ZrB2(0001) on Si(111)HU, C.-W ; CHIZMESHYA, A. V. G ; TOLLE, J ; KOUVETAKIS, J ; TSENG, I. S. TJournal of crystal growth, 2004-07, Vol.267 (3-4), p.554-563 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
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9 |
Material Type: Artigo
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Epitaxial film growth of zirconium diboride on Si(0 0 1)Roucka, R. ; Tolle, J. ; Chizmeshya, A.V.G. ; Tsong, I.S.T. ; Kouvetakis, J.Journal of crystal growth, 2005-04, Vol.277 (1), p.364-371 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Mismatched Heteroepitaxy of Tetrahedral Semiconductors with Si via ZrB2 TemplatesTrivedi, Rahul ; Liu, Po−Liang ; Roucka, Radek ; Tolle, John ; Chizmeshya, Andrew V. G ; Tsong, Ignatius S. T ; Kouvetakis, JohnChemistry of materials, 2005-09, Vol.17 (18), p.4647-4652 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |