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GaN in different dimensionalities: Properties, synthesis, and applications
GaN in different dimensionalities: Properties, synthesis, and applications
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GaN in different dimensionalities: Properties, synthesis, and applications

Chen, Yunxu ; Liu, Jinxin ; Liu, Keli ; Si, Jingjing ; Ding, Yiran ; Li, Linyang ; Lv, Tianrui ; Liu, Jianping ; Fu, Lei

Materials science & engineering. R, Reports : a review journal, 2019-10, Vol.138, p.60-84 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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2
Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor
Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor
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Hydrostatic pressure effect on lattice thermal conductivity of wurtzite GaN semiconductor

Abdullah, Diman M ; Omar, M S

Bulletin of materials science, 2024-06, Vol.47 (2), p.80 [Periódico revisado por pares]

Bangalore: Indian Academy of Sciences

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3
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs

Meier, Johanna ; Bacher, Gerd

Materials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]

Switzerland: MDPI AG

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4
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan, Minjiang ; Hu, Gongwei ; Nie, Jiaheng ; Li, Lijie ; Zhang, Yan

Small (Weinheim an der Bergstrasse, Germany), 2021-04, Vol.17 (13), p.e2008106-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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5
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
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Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments

Guo, Jian ; Qiu, Changjun ; Zhu, Huiling ; Wang, Yongqiang

Materials, 2019-08, Vol.12 (17), p.2653 [Periódico revisado por pares]

Switzerland: MDPI AG

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6
InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics
InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics
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InGaN/GaN Quantum Dots on Silicon With Coalesced Nanowire Buffer Layers: A Potential Technology for Visible Silicon Photonics

Das, Debabrata ; Aiello, Anthony ; Guo, Wei ; Bhattacharya, Pallab

IEEE transactions on nanotechnology, 2020, Vol.19, p.571-574 [Periódico revisado por pares]

New York: IEEE

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7
Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions
Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions
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Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions

Tian, Feng ; Kong, Delin ; Qiu, Peng ; Liu, Heng ; Zhu, Xiaoli ; Wei, Huiyun ; Song, Yimeng ; Chen, Hong ; Zheng, Xinhe ; Peng, Mingzeng

Crystals (Basel), 2023-04, Vol.13 (4), p.563 [Periódico revisado por pares]

Basel: MDPI AG

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8
Self-Assembled GaN Nanowires on Diamond
Self-Assembled GaN Nanowires on Diamond
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Self-Assembled GaN Nanowires on Diamond

Schuster, Fabian ; Furtmayr, Florian ; Zamani, Reza ; Magén, Cesar ; Morante, Joan R ; Arbiol, Jordi ; Garrido, Jose A ; Stutzmann, Martin

Nano letters, 2012-05, Vol.12 (5), p.2199-2204 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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9
Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy
Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy
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Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Wu, Yaozheng ; Liu, Bin ; Li, Zhenhua ; Tao, Tao ; Xie, Zili ; Wang, Ke ; Xiu, Xiangqian ; Chen, Dunjun ; Lu, Hai ; Zhang, Rong ; Zheng, Youdou

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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10
Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
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Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy

Tyagi, Prashant ; Ramesh, Ch ; Kushvaha, S. S. ; Gupta, Govind ; Senthil Kumar, M.

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3919-3924

26650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific Publishers

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