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1
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs

Meier, Johanna ; Bacher, Gerd

Materials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]

Switzerland: MDPI AG

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2
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
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Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments

Guo, Jian ; Qiu, Changjun ; Zhu, Huiling ; Wang, Yongqiang

Materials, 2019-08, Vol.12 (17), p.2653 [Periódico revisado por pares]

Switzerland: MDPI AG

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3
Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions
Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions
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Polarization Modulation on Charge Transfer and Band Structures of GaN/MoS2 Polar Heterojunctions

Tian, Feng ; Kong, Delin ; Qiu, Peng ; Liu, Heng ; Zhu, Xiaoli ; Wei, Huiyun ; Song, Yimeng ; Chen, Hong ; Zheng, Xinhe ; Peng, Mingzeng

Crystals (Basel), 2023-04, Vol.13 (4), p.563 [Periódico revisado por pares]

Basel: MDPI AG

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4
Many-Body Calculations of Excitons in Two-Dimensional GaN
Many-Body Calculations of Excitons in Two-Dimensional GaN
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Many-Body Calculations of Excitons in Two-Dimensional GaN

Zhang, Yachao

Crystals (Basel), 2023-07, Vol.13 (7), p.1048 [Periódico revisado por pares]

Basel: MDPI AG

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5
Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique
Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique
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Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique

Valdez-Torija, Eduardo Alejandro ; Coyopol, Antonio ; García-Salgado, Godofredo ; Romano-Trujillo, Román ; Morales-Ruiz, Crisóforo ; Rosendo-Andrés, Enrique ; Vásquez-Agustín, Marco Antonio ; Gracia-Jiménez, Justo Miguel ; Galeazzi-Isasmendi, Reina ; Morales-Morales, Francisco

Crystals (Basel), 2023-04, Vol.13 (4), p.613 [Periódico revisado por pares]

Basel: MDPI AG

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6
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
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Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Li, Tianbao ; Liu, Chenyang ; Zhang, Zhe ; Yu, Bin ; Dong, Hailiang ; Jia, Wei ; Jia, Zhigang ; Yu, Chunyan ; Gan, Lin ; Xu, Bingshe ; Jiang, Haiwei

Nanoscale research letters, 2018-04, Vol.13 (1), p.130-7, Article 130 [Periódico revisado por pares]

New York: Springer US

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7
Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness
Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness
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Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

Xu, Huan ; Hou, Xin ; Chen, Lan ; Mei, Yang ; Zhang, Baoping

Crystals (Basel), 2022-01, Vol.12 (1), p.114 [Periódico revisado por pares]

Basel: MDPI AG

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8
Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt
Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt
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Synthesis of GaN Crystals by Nitrogen Pressure-Controlled Recrystallization Technique in Na Alloy Melt

Wu, Xi ; Wang, Hongcheng ; Ling, Dongxiong ; Jia, Chuanyu ; Lü, Wei ; Liu, Ye ; Zhou, Fei ; Li, Zhenrong

Crystals (Basel), 2021-09, Vol.11 (9), p.1058 [Periódico revisado por pares]

Basel: MDPI AG

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9
Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering
Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering
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Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering

Troy, William ; Dutta, Mitra ; Stroscio, Michael

Nanomaterials (Basel, Switzerland), 2021-07, Vol.11 (8), p.1956 [Periódico revisado por pares]

Basel: MDPI AG

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10
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
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The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Davydov, Valery ; Roginskii, Evgenii M. ; Kitaev, Yuri ; Smirnov, Alexander ; Eliseyev, Ilya ; Zavarin, Eugene ; Lundin, Wsevolod ; Nechaev, Dmitrii ; Jmerik, Valentin ; Smirnov, Mikhail ; Pristovsek, Markus ; Shubina, Tatiana

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (9), p.2396 [Periódico revisado por pares]

Basel: MDPI AG

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