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Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon
Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon
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Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon

Lange, A.P. ; Tan, X.L. ; Fadley, C.S. ; Mahajan, S.

Acta materialia, 2016-08, Vol.115, p.94-103 [Periódico revisado por pares]

Elsevier Ltd

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2
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite
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Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Li, Tianbao ; Liu, Chenyang ; Zhang, Zhe ; Yu, Bin ; Dong, Hailiang ; Jia, Wei ; Jia, Zhigang ; Yu, Chunyan ; Gan, Lin ; Xu, Bingshe ; Jiang, Haiwei

Nanoscale research letters, 2018-04, Vol.13 (1), p.130-7, Article 130 [Periódico revisado por pares]

New York: Springer US

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3
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst
Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst
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Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst

Lee, Kyuseung ; Chae, Sooryong ; Jang, Jongjin ; Min, Daehong ; Kim, Jaehwan ; Eom, Daeyong ; Yoo, Yang-Seok ; Cho, Yong-Hoon ; Nam, Okhyun

Nanotechnology, 2015-08, Vol.26 (33), p.335601-335601 [Periódico revisado por pares]

England: IOP Publishing

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4
Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering
Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering
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Spontaneous Polarization Calculations in Wurtzite II-Oxides, III-Nitrides, and SiC Polytypes through Net Dipole Moments and the Effects of Nanoscale Layering

Troy, William ; Dutta, Mitra ; Stroscio, Michael

Nanomaterials (Basel, Switzerland), 2021-07, Vol.11 (8), p.1956 [Periódico revisado por pares]

Basel: MDPI AG

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5
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
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The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Davydov, Valery ; Roginskii, Evgenii M. ; Kitaev, Yuri ; Smirnov, Alexander ; Eliseyev, Ilya ; Zavarin, Eugene ; Lundin, Wsevolod ; Nechaev, Dmitrii ; Jmerik, Valentin ; Smirnov, Mikhail ; Pristovsek, Markus ; Shubina, Tatiana

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (9), p.2396 [Periódico revisado por pares]

Basel: MDPI AG

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6
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Schilirò, Emanuela ; Giannazzo, Filippo ; Di Franco, Salvatore ; Greco, Giuseppe ; Fiorenza, Patrick ; Roccaforte, Fabrizio ; Prystawko, Paweł ; Kruszewski, Piotr ; Leszczynski, Mike ; Cora, Ildiko ; Pécz, Béla ; Fogarassy, Zsolt ; Lo Nigro, Raffaella

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316 [Periódico revisado por pares]

Switzerland: MDPI AG

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7
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier, S. ; Moudakir, T. ; Patriarche, G. ; Rogers, D.J. ; Sandana, V.E. ; Hosseini Téherani, F. ; Bove, P. ; El Gmili, Y. ; Pantzas, K. ; Sundaram, Suresh ; Troadec, D. ; Voss, P.L. ; Razeghi, M. ; Ougazzaden, A.

Journal of crystal growth, 2013-05, Vol.370, p.63-67 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes
Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes
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Electrical Characteristics of Ti/Al Ohmic Contacts to Molecular Beam Epitaxy-Grown N-polar n-type GaN for Vertical-Structure Light-Emitting Diodes

Jeon, Joon-Woo ; Seong, Tae-Yeon ; Namgoong, Gon

Journal of electronic materials, 2012-08, Vol.41 (8), p.2145-2150 [Periódico revisado por pares]

Boston: Springer US

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