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Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors
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Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

Ramesh, Ch ; Tyagi, P. ; Bhattacharyya, Biplab ; Husale, Sudhir ; Maurya, K.K. ; Kumar, M. Senthil ; Kushvaha, S.S.

Journal of alloys and compounds, 2019-01, Vol.770, p.572-581 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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2
GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT
GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT
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GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT

García-Salgado, G. ; Cruz-Bueno, J.J. ; Ramírez-González, F.S. ; Gastellou, E. ; Nieto-Caballero, F.G. ; Rosendo-Andrés, E. ; Luna-López, J.A. ; Coyopol-Solís, A. ; Romano-Trujillo, R. ; Morales-Ruiz, C. ; Galeazzi-Isasmendi, R. ; López-Gayou, V. ; Severiano, F.

Journal of alloys and compounds, 2021-12, Vol.887, p.161469, Article 161469 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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3
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs
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Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs

Meier, Johanna ; Bacher, Gerd

Materials, 2022-02, Vol.15 (5), p.1626 [Periódico revisado por pares]

Switzerland: MDPI AG

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4
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well
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High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Dan, Minjiang ; Hu, Gongwei ; Nie, Jiaheng ; Li, Lijie ; Zhang, Yan

Small (Weinheim an der Bergstrasse, Germany), 2021-04, Vol.17 (13), p.e2008106-n/a [Periódico revisado por pares]

Germany: Wiley Subscription Services, Inc

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5
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments
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Nanotribological Properties of Ga- and N-Faced Bulk Gallium Nitride Surfaces Determined by Nanoscratch Experiments

Guo, Jian ; Qiu, Changjun ; Zhu, Huiling ; Wang, Yongqiang

Materials, 2019-08, Vol.12 (17), p.2653 [Periódico revisado por pares]

Switzerland: MDPI AG

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6
Self-Assembled GaN Nanowires on Diamond
Self-Assembled GaN Nanowires on Diamond
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Self-Assembled GaN Nanowires on Diamond

Schuster, Fabian ; Furtmayr, Florian ; Zamani, Reza ; Magén, Cesar ; Morante, Joan R ; Arbiol, Jordi ; Garrido, Jose A ; Stutzmann, Martin

Nano letters, 2012-05, Vol.12 (5), p.2199-2204 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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7
A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode
A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode
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A new type photodiode: p-Si/GaN pn junction in series with GaN/Ag Schottky diode

Yakuphanoglu, F. ; Shokr, F.S. ; Gupta, R.K. ; Al-Ghamdi, Ahmed A. ; Bin-Omran, S. ; Al-Turki, Yusuf ; El-Tantawy, Farid

Journal of alloys and compounds, 2015-11, Vol.650, p.671-675 [Periódico revisado por pares]

Elsevier B.V

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8
Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy
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Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy

Tyagi, Prashant ; Ramesh, Ch ; Kushvaha, S. S. ; Gupta, Govind ; Senthil Kumar, M.

Journal of nanoscience and nanotechnology, 2020-06, Vol.20 (6), p.3919-3924

26650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific Publishers

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9
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices
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The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Davydov, Valery ; Roginskii, Evgenii M. ; Kitaev, Yuri ; Smirnov, Alexander ; Eliseyev, Ilya ; Zavarin, Eugene ; Lundin, Wsevolod ; Nechaev, Dmitrii ; Jmerik, Valentin ; Smirnov, Mikhail ; Pristovsek, Markus ; Shubina, Tatiana

Nanomaterials (Basel, Switzerland), 2021-09, Vol.11 (9), p.2396 [Periódico revisado por pares]

Basel: MDPI AG

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10
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Schilirò, Emanuela ; Giannazzo, Filippo ; Di Franco, Salvatore ; Greco, Giuseppe ; Fiorenza, Patrick ; Roccaforte, Fabrizio ; Prystawko, Paweł ; Kruszewski, Piotr ; Leszczynski, Mike ; Cora, Ildiko ; Pécz, Béla ; Fogarassy, Zsolt ; Lo Nigro, Raffaella

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316 [Periódico revisado por pares]

Switzerland: MDPI AG

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