Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Computational study of surface orientation effect of wurtzite GaN on CH4 and CO sensing mechanismWang, Junjun ; Chen, Yaonan ; Wang, Yan ; Xu, Yonghao ; Zhang, ZhanyingVacuum, 2023-02, Vol.208, p.111724, Article 111724 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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2 |
Material Type: Artigo
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Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulationLiu, Huan ; Zhao, Pengyue ; Zhu, Wendong ; Pan, Jiansheng ; Wang, Ziyun ; Gao, Xifeng ; Wang, Shunbo ; Tan, JiubinMaterials today communications, 2024-03, Vol.38, p.107748, Article 107748 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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3 |
Material Type: Artigo
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Effect of diamond grain shape on gallium nitride nano-grinding processZhang, Shuai ; Dai, HoufuMaterials science in semiconductor processing, 2024-03, Vol.171, p.108034, Article 108034 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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4 |
Material Type: Artigo
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Analysis of dielectric function and dynamic structure factor of a multi-component plasma in a wurtzite GaNKim, Hye-Jung ; Yi, Kyung-SooCurrent applied physics, 2015-09, Vol.15, p.S16-S21 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Synthesis and structure of nanocrystal-assembled bulk GaNChen, X.L ; Cao, Y.G ; Lan, Y.C ; Xu, X.P ; Li, J.Q ; Lu, K.Q ; Jiang, P.Z ; Xu, T ; Bai, Z.G ; Yu, Y.D ; Liang, J.KJournal of crystal growth, 2000-01, Vol.209 (1), p.208-212 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopyXUE, Q. K ; XUE, Q. Z ; KUWANO, S ; SAKURAI, T ; OHNO, T ; TSONG, I. S. T ; QIU, X. G ; SEGAWA, YThin solid films, 2000-05, Vol.367 (1-2), p.149-158 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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7 |
Material Type: Artigo
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Energy band and acceptor binding energy of GaN and AlxGa1−xNXia, Jian-Bai ; Cheah, K.W ; Wang, Xiao-Liang ; Sun, Dian-Zhao ; Kong, Mei-YingMaterials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2-3), p.204-206 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Artigo
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Polytypes in GaN films grown by metalorganic chemical vapor deposition on (0 0 0 1) sapphire substrateJoo Lee, Hwack ; Ryu, Hyun ; Lee, Cheul-Ro ; Kim, KeunjooJournal of crystal growth, 1998-08, Vol.191 (4), p.621-626 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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A novel crystal defect in epitaxial wurtzite gallium nitride filmWang, S.Q ; Liu, C.PMaterials letters, 1999-02, Vol.38 (3), p.202-207 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism techniqueJulier, M ; Campo, J ; Coquillat, D ; Lascaray, J.P ; Scalbert, D ; Briot, OMaterials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.126-129 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |