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1
Computational study of surface orientation effect of wurtzite GaN on CH4 and CO sensing mechanism
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Computational study of surface orientation effect of wurtzite GaN on CH4 and CO sensing mechanism

Wang, Junjun ; Chen, Yaonan ; Wang, Yan ; Xu, Yonghao ; Zhang, Zhanying

Vacuum, 2023-02, Vol.208, p.111724, Article 111724 [Periódico revisado por pares]

Elsevier Ltd

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2
Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulation
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Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulation

Liu, Huan ; Zhao, Pengyue ; Zhu, Wendong ; Pan, Jiansheng ; Wang, Ziyun ; Gao, Xifeng ; Wang, Shunbo ; Tan, Jiubin

Materials today communications, 2024-03, Vol.38, p.107748, Article 107748 [Periódico revisado por pares]

Elsevier Ltd

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3
Effect of diamond grain shape on gallium nitride nano-grinding process
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Effect of diamond grain shape on gallium nitride nano-grinding process

Zhang, Shuai ; Dai, Houfu

Materials science in semiconductor processing, 2024-03, Vol.171, p.108034, Article 108034 [Periódico revisado por pares]

Elsevier Ltd

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4
Analysis of dielectric function and dynamic structure factor of a multi-component plasma in a wurtzite GaN
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Analysis of dielectric function and dynamic structure factor of a multi-component plasma in a wurtzite GaN

Kim, Hye-Jung ; Yi, Kyung-Soo

Current applied physics, 2015-09, Vol.15, p.S16-S21 [Periódico revisado por pares]

Elsevier B.V

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5
Synthesis and structure of nanocrystal-assembled bulk GaN
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Synthesis and structure of nanocrystal-assembled bulk GaN

Chen, X.L ; Cao, Y.G ; Lan, Y.C ; Xu, X.P ; Li, J.Q ; Lu, K.Q ; Jiang, P.Z ; Xu, T ; Bai, Z.G ; Yu, Y.D ; Liang, J.K

Journal of crystal growth, 2000-01, Vol.209 (1), p.208-212 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy
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Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

XUE, Q. K ; XUE, Q. Z ; KUWANO, S ; SAKURAI, T ; OHNO, T ; TSONG, I. S. T ; QIU, X. G ; SEGAWA, Y

Thin solid films, 2000-05, Vol.367 (1-2), p.149-158 [Periódico revisado por pares]

Lausanne: Elsevier Science

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7
Energy band and acceptor binding energy of GaN and AlxGa1−xN
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Energy band and acceptor binding energy of GaN and AlxGa1−xN

Xia, Jian-Bai ; Cheah, K.W ; Wang, Xiao-Liang ; Sun, Dian-Zhao ; Kong, Mei-Ying

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-06, Vol.75 (2-3), p.204-206 [Periódico revisado por pares]

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8
Polytypes in GaN films grown by metalorganic chemical vapor deposition on (0 0 0 1) sapphire substrate
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Polytypes in GaN films grown by metalorganic chemical vapor deposition on (0 0 0 1) sapphire substrate

Joo Lee, Hwack ; Ryu, Hyun ; Lee, Cheul-Ro ; Kim, Keunjoo

Journal of crystal growth, 1998-08, Vol.191 (4), p.621-626 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
A novel crystal defect in epitaxial wurtzite gallium nitride film
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A novel crystal defect in epitaxial wurtzite gallium nitride film

Wang, S.Q ; Liu, C.P

Materials letters, 1999-02, Vol.38 (3), p.202-207 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique
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Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique

Julier, M ; Campo, J ; Coquillat, D ; Lascaray, J.P ; Scalbert, D ; Briot, O

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1), p.126-129 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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