Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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STM and XPS characterisation of vacuum annealed nanocrystalline WO3 filmsMAFFEIS, T. G. G ; YUNG, D ; LEPENNEC, L ; PENNY, M. W ; COBLEY, R. J ; COMINI, E ; SBERVEGLIERI, G ; WILKS, S. PSurface science, 2007-11, Vol.601 (21), p.4953-4957 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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2 |
Material Type: Artigo
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A highly efficient algorithm for the generation of random fractal aggregatesBrown, M.R. ; Errington, R. ; Rees, P. ; Williams, P.R. ; Wilks, S.P.Physica. D, 2010-06, Vol.239 (12), p.1061-1066 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Investigation of the 4H–SiC surfaceGuy, O.J. ; Lodzinski, M. ; Teng, K.S. ; Maffeis, T.G.G. ; Tan, M. ; Blackwood, I. ; Dunstan, P.R. ; Al-Hartomy, O. ; Wilks, S.P. ; Wilby, T. ; Rimmer, N. ; Lewis, D. ; Hopkins, J.Applied surface science, 2008-10, Vol.254 (24), p.8098-8105 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopyCobley, R.J. ; Teng, K.S. ; Brown, M.R. ; Rees, P. ; Wilks, S.P.Applied surface science, 2010-07, Vol.256 (19), p.5736-5739 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Study of a novel Si/SiC hetero-junction MOSFETChen, L. ; Guy, O.J. ; Jennings, M.R. ; Igic, P. ; Wilks, S.P. ; Mawby, P.A.Solid-state electronics, 2007-05, Vol.51 (5), p.662-666 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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6 |
Material Type: Artigo
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X-ray photoelectron spectroscopy studies on the formation of chromium contacts to single-crystal CVD diamondDoneddu, D. ; Guy, O.J. ; Dunstan, P.R. ; Maffeis, T.G.G. ; Teng, K.S. ; Wilks, S.P. ; Igic, P. ; Twitchen, D. ; Clement, R.M.Surface science, 2008-03, Vol.602 (6), p.1135-1140 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasersCobley, R.J. ; Teng, K.S. ; Maffeïs, T.G.G. ; Wilks, S.P.Surface science, 2006-07, Vol.600 (14), p.2857-2859 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Study of 4H–SiC trench MOSFET structuresChen, L. ; Guy, O.J. ; Jennings, M.R. ; Igic, P. ; Wilks, S.P. ; Mawby, P.A.Solid-state electronics, 2005-07, Vol.49 (7), p.1081-1085 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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9 |
Material Type: Artigo
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Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap: Investigated using current voltage measurements and atomic force microscopyGuy, O.J. ; Doneddu, D. ; Chen, L. ; Jennings, M.R. ; Ackland, M.P. ; Baylis, R. ; Holton, M.D. ; Dunstan, P. ; Wilks, S.P. ; Mawby, P.A.Diamond and related materials, 2006-09, Vol.15 (9), p.1472-1477 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Report on 4H–SiC JTE Schottky diodesChen, L. ; Guy, O.J. ; Doneddu, D. ; Batcup, S.G.J. ; Wilks, S.P. ; Mawby, P.A. ; Bouchet, T. ; Torregrosa, F.Microelectronics and reliability, 2006-02, Vol.46 (2), p.637-640 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |