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Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE
Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE
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Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE

Cirlin, G.E. ; Zakharov, N.D. ; Egorov, V.A. ; Werner, P. ; Ustinov, V.M. ; Ledentsov, N.N.

Thin solid films, 2003-03, Vol.428 (1), p.156-159 [Periódico revisado por pares]

Elsevier B.V

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2
Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature
Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature
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Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

Lobanov, D. N. ; Novikov, A. V. ; Kudryavtsev, K. E. ; Shengurov, D. V. ; Drozdov, Yu. N. ; Yablonskiy, A. N. ; Shmagin, V. B. ; Krasilnik, Z. F. ; Zakharov, N. D. ; Werner, P.

Semiconductors (Woodbury, N.Y.), 2009-03, Vol.43 (3), p.313-317 [Periódico revisado por pares]

Dordrecht: SP MAIK Nauka/Interperiodica

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3
TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature
TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature
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TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature

Zakharov, N.D. ; Talalaev, V.G. ; Cirlin, G.E. ; Tonkikh, A. ; Werner, P.

Microscopy and microanalysis, 2003-09, Vol.9 (S03), p.282-283 [Periódico revisado por pares]

New York, USA: Cambridge University Press

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4
Synthesis and structure of organosilicon and organogermanium complexes of ytterbium (Ph3E)2Yb(THF)4 with Yb-Si and Yb-Ge bonds
Synthesis and structure of organosilicon and organogermanium complexes of ytterbium (Ph3E)2Yb(THF)4 with Yb-Si and Yb-Ge bonds
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Synthesis and structure of organosilicon and organogermanium complexes of ytterbium (Ph3E)2Yb(THF)4 with Yb-Si and Yb-Ge bonds

Bochkarev, Leonid N. ; Makarov, Valentin M. ; Hrzhanovskaya, Yulia N. ; Zakharov, Lev N. ; Fukin, Georgy K. ; Yanovsky, Alekxander I. ; Struchkov, Yury T.

Journal of organometallic chemistry, 1994-03, Vol.467 (2), p.C3-C5 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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5
Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix
Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix
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Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix

Cirlin, George E. ; Talalaev, Vadim G. ; Egorov, Vyatcheslav A. ; Zakharov, Nikolai D. ; Werner, Peter ; Ledentsov, Nikolai N. ; Ustinov, Victor M.

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.131-133 [Periódico revisado por pares]

Elsevier B.V

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