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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Laser Scribing of High-Performance and Flexible Graphene-Based Electrochemical CapacitorsEl-Kady, Maher F. ; Strong, Veronica ; Dubin, Sergey ; Kaner, Richard B.Science (American Association for the Advancement of Science), 2012-03, Vol.335 (6074), p.1326-1330 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
| 2 |
Material Type: Artigo
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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic ComputationShimeng Yu ; Yi Wu ; Jeyasingh, R. ; Kuzum, D. ; Wong, H. P.IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2729-2737 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 3 |
Material Type: Artigo
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Experimental demonstration of associative memory with memristive neural networksPershin, Yuriy V. ; Di Ventra, MassimilianoNeural networks, 2010-09, Vol.23 (7), p.881-886 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
| 4 |
Material Type: Artigo
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Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide SwitchesYou Zhou ; Xiaonan Chen ; Changhyun Ko ; Zheng Yang ; Mouli, C. ; Ramanathan, S.IEEE electron device letters, 2013-02, Vol.34 (2), p.220-222 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 5 |
Material Type: Artigo
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A 1 k-Pixel Video Camera for 0.7-1.1 Terahertz Imaging Applications in 65-nm CMOSAl Hadi, R. ; Sherry, H. ; Grzyb, J. ; Yan Zhao ; Forster, W. ; Keller, H. M. ; Cathelin, A. ; Kaiser, A. ; Pfeiffer, U. R.IEEE journal of solid-state circuits, 2012-12, Vol.47 (12), p.2999-3012 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 6 |
Material Type: Artigo
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Magnetization vector manipulation by electric fieldsOhno, H ; Chiba, D ; Sawicki, M ; Nishitani, Y ; Nakatani, Y ; Matsukura, FNature, 2008-09, Vol.455 (7212), p.515-518 [Periódico revisado por pares]London: Nature PublishingTexto completo disponível |
| 7 |
Material Type: Artigo
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Organic Nonvolatile Memory Transistors for Flexible Sensor ArraysSekitani, Tsuyoshi ; Yokota, Tomoyuki ; Zschieschang, Ute ; Klauk, Hagen ; Bauer, Siegfried ; Takeuchi, Ken ; Takamiya, Makoto ; Sakurai, Takayasu ; Someya, TakaoScience (American Association for the Advancement of Science), 2009-12, Vol.326 (5959), p.1516-1519 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
| 8 |
Material Type: Artigo
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Magnetic Domain-Wall Racetrack MemoryParkin, Stuart S.P ; Hayashi, Masamitsu ; Thomas, LucScience (American Association for the Advancement of Science), 2008-04, Vol.320 (5873), p.190-194 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
| 9 |
Material Type: Artigo
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Circuit Elements With Memory: Memristors, Memcapacitors, and MeminductorsDi Ventra, Massimiliano ; Pershin, Yuriy V. ; Chua, Leon O.Proceedings of the IEEE, 2009-10, Vol.97 (10), p.1717-1724 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament GrowthIelmini, D.IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4309-4317 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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