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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Experimental demonstration of associative memory with memristive neural networksPershin, Yuriy V. ; Di Ventra, MassimilianoNeural networks, 2010-09, Vol.23 (7), p.881-886 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
| 2 |
Material Type: Artigo
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Organic Nonvolatile Memory Transistors for Flexible Sensor ArraysSekitani, Tsuyoshi ; Yokota, Tomoyuki ; Zschieschang, Ute ; Klauk, Hagen ; Bauer, Siegfried ; Takeuchi, Ken ; Takamiya, Makoto ; Sakurai, Takayasu ; Someya, TakaoScience (American Association for the Advancement of Science), 2009-12, Vol.326 (5959), p.1516-1519 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
| 3 |
Material Type: Artigo
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Magnetic Domain-Wall Racetrack MemoryParkin, Stuart S.P ; Hayashi, Masamitsu ; Thomas, LucScience (American Association for the Advancement of Science), 2008-04, Vol.320 (5873), p.190-194 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
| 4 |
Material Type: Artigo
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Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament GrowthIelmini, D.IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4309-4317 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 5 |
Material Type: Artigo
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A SPICE Compact Model of Metal Oxide Resistive Switching Memory With VariationsXimeng Guan ; Shimeng Yu ; Wong, H-S P.IEEE electron device letters, 2012-10, Vol.33 (10), p.1405-1407 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 6 |
Material Type: Artigo
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Immunity to Device Variations in a Spiking Neural Network With Memristive NanodevicesQuerlioz, Damien ; Bichler, Olivier ; Dollfus, Philippe ; Gamrat, ChristianIEEE transactions on nanotechnology, 2013-05, Vol.12 (3), p.288-295 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 7 |
Material Type: Artigo
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part I: Experimental StudyNardi, Federico ; Larentis, Stefano ; Balatti, Simone ; Gilmer, David C. ; Ielmini, DanieleIEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2461-2467 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 8 |
Material Type: Artigo
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Current-Controlled Magnetic Domain-Wall Nanowire Shift RegisterHayashi, Masamitsu ; Thomas, Luc ; Moriya, Rai ; Rettner, Charles ; Parkin, Stuart S.PScience (American Association for the Advancement of Science), 2008-04, Vol.320 (5873), p.209-211 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
| 9 |
Material Type: Artigo
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Lagrange Stability of Memristive Neural Networks With Discrete and Distributed DelaysWu, Ailong ; Zeng, ZhigangIEEE transaction on neural networks and learning systems, 2014-04, Vol.25 (4), p.690-703New York, NY: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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State Dynamics and Modeling of Tantalum Oxide MemristorsStrachan, J. P. ; Torrezan, A. C. ; Feng Miao ; Pickett, M. D. ; Yang, J. J. ; Wei Yi ; Medeiros-Ribeiro, G. ; Williams, R. S.IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2194-2202 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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