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Refinado por: assunto: Physics, Applied remover idioma: Alemão remover
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1
The effect of annealing upon the resistivity distribution in subsurface layers of silicon irradiated with hydrogen and helium ions
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The effect of annealing upon the resistivity distribution in subsurface layers of silicon irradiated with hydrogen and helium ions

Bulgakov, Yu. V. ; Kuznetsov, N. V. ; Yatsenko, L. A.

Physica status solidi. A, Applied research, 1980-09, Vol.61 (1), p.K81-K82

Berlin: WILEY-VCH Verlag

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2
Measurement of average projective ranges of ions with energies of hundreds and thousands of keV in silicon using the resistance technique
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Measurement of average projective ranges of ions with energies of hundreds and thousands of keV in silicon using the resistance technique

Bulgakov, Yu. V. ; Kolomenskaya, T. I. ; Kuznetsov, N. V. ; Yatsenko, L. A.

Physica status solidi. A, Applied research, 1980-12, Vol.62 (2), p.459-466

Berlin: WILEY-VCH Verlag

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3
The dependence of the resistance profile in silicon irradiated with hydrogen and helium ions on the ion energy and fluence
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The dependence of the resistance profile in silicon irradiated with hydrogen and helium ions on the ion energy and fluence

Bulgakov, Yu. V. ; Kolomenskaya, T. I. ; Kuznetsov, N. V. ; Yatsenko, L. A.

Physica status solidi. A, Applied research, 1980-09, Vol.61 (1), p.K77-K79

Berlin: WILEY-VCH Verlag

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