skip to main content
Idioma:
Refinado por: Nome da Publicação: Semiconductors remover assunto: Nitrogen remover nível superior: Recursos Online remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
Material Type:
Artigo 		Adicionar ao Meu Espaço

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

Sobolev, N. A. ; Sakharov, V. I. ; Serenkov, I. T. ; Bondarev, A. D. ; Karabeshkin, K. V. ; Fomin, E. V. ; Kalyadin, A. E. ; Mikoushkin, V. M. ; Shek, E. I. ; Sherstnev, E. V.

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.415-418 [Periódico revisado por pares]

Moscow: Pleiades Publishing

Texto completo disponível

Citações Citado por

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.