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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover Nome da Publicação: Japanese Journal Of Applied Physics Part 2-Letters remover
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1
Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure
Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure
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Epitaxial Growth of Zinc Oxide Whiskers by Chemical-Vapor Deposition under Atmospheric Pressure

Satoh, Minoru ; Tanaka, Norio ; Ueda, Yoshikazu ; Ohshio, Shigeo ; Saitoh, Hidetoshi

Japanese Journal of Applied Physics, 1999-05, Vol.38 (Part 2, No. 5B), p.L586-L589 [Periódico revisado por pares]

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2
A Simple and Novel Way to Synthesize Aligned Nanotube Bundles at Low Temperature
A Simple and Novel Way to Synthesize Aligned Nanotube Bundles at Low Temperature
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A Simple and Novel Way to Synthesize Aligned Nanotube Bundles at Low Temperature

Mukhopadhyay, Kingsuk ; Koshio, Akira ; Tanaka, Nobuo ; Shinohara, Hisanori

Japanese Journal of Applied Physics, 1998-10, Vol.37 (Part 2, No. 10B), p.L1257-L1259 [Periódico revisado por pares]

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3
High-Rate Epitaxy of Anatase Films by Atmospheric Chemical Vapor Deposition
High-Rate Epitaxy of Anatase Films by Atmospheric Chemical Vapor Deposition
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High-Rate Epitaxy of Anatase Films by Atmospheric Chemical Vapor Deposition

Shuji Tokita, Shuji Tokita ; Norio Tanaka, Norio Tanaka ; Hidetoshi Saitoh, Hidetoshi Saitoh

Japanese Journal of Applied Physics, 2000, Vol.39 (2B), p.L169-L171 [Periódico revisado por pares]

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4
Production of Single-Wall Nanotubes by High-Temperature Pulsed Arc Discharge: Mechanisms of their Production
Production of Single-Wall Nanotubes by High-Temperature Pulsed Arc Discharge: Mechanisms of their Production
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Production of Single-Wall Nanotubes by High-Temperature Pulsed Arc Discharge: Mechanisms of their Production

Sugai, Toshiki ; Omote, Hideki ; Bandow, Shunji ; Tanaka, Nobuo ; Shinohara, Hisanori

Japanese Journal of Applied Physics, 1999-04, Vol.38 (Part 2, No. 4B), p.L477-L479 [Periódico revisado por pares]

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5
Improvement of YBa2Cu3Ox Single-Crystal Surface by Chemical Etching
Improvement of YBa2Cu3Ox Single-Crystal Surface by Chemical Etching
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Improvement of YBa2Cu3Ox Single-Crystal Surface by Chemical Etching

Tanaka, Nobue ; Zama, Hideaki ; Morishita, Tadataka ; Yamamoto, Hiroshi

Japanese Journal of Applied Physics, 1999-07, Vol.38 (Part 2, No. 7A), p.L731-L733 [Periódico revisado por pares]

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6
Crystal Growth of Highly Oriented Zinc Oxide by Laser Deposition Technique with Metal-EDTA (ethylene diamine tetra-acetic acid) Complexes
Crystal Growth of Highly Oriented Zinc Oxide by Laser Deposition Technique with Metal-EDTA (ethylene diamine tetra-acetic acid) Complexes
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Crystal Growth of Highly Oriented Zinc Oxide by Laser Deposition Technique with Metal-EDTA (ethylene diamine tetra-acetic acid) Complexes

Tanaka, Norio ; Ohshio, Shigeo ; Saitoh, Hidetoshi ; Uematsu, Keizo

Japanese Journal of Applied Physics, 1998-10, Vol.37 (Part 2, No. 10A), p.L1165-L1168 [Periódico revisado por pares]

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7
Effects of GaAs-surface roughness on the electron-beam patterning characteristics of a surface-oxide layer
Effects of GaAs-surface roughness on the electron-beam patterning characteristics of a surface-oxide layer
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Effects of GaAs-surface roughness on the electron-beam patterning characteristics of a surface-oxide layer

ISHIKAWA, T ; TANAKA, N ; LOPEZ, M ; MATSUYAMA, I

Japanese Journal of Applied Physics, 1996-05, Vol.35 (5B), p.L619-L622 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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8
A way of distinguishing chaos from random fractal sequences based on the difference in time reversal symmetry
A way of distinguishing chaos from random fractal sequences based on the difference in time reversal symmetry
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A way of distinguishing chaos from random fractal sequences based on the difference in time reversal symmetry

TANAKA, N ; OKAMOTO, H ; NAITO, M

Japanese Journal of Applied Physics, 1995-07, Vol.34 (7A), p.L863-L865 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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9
Nanometer-area electron diffraction of interfaces of semiconductor superlattices
Nanometer-area electron diffraction of interfaces of semiconductor superlattices
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Nanometer-area electron diffraction of interfaces of semiconductor superlattices

TANAKA, N

Japanese Journal of Applied Physics, 1988-03, Vol.27 (3), p.L468-L471 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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10
In situ fabrication of buried GaAs/AlGaAs quantum-well mesa-stripe structures with improved regrown interfaces
In situ fabrication of buried GaAs/AlGaAs quantum-well mesa-stripe structures with improved regrown interfaces
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In situ fabrication of buried GaAs/AlGaAs quantum-well mesa-stripe structures with improved regrown interfaces

ISHIKAWA, T ; MATSUYAMA, I ; TANAKA, N ; LOPEZ, M ; TAMURA, M ; NANBU, Y

Japanese Journal of Applied Physics, 1995-10, Vol.34 (10B), p.L1412-L1415 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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