Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Effectiveness of low-level gallium aluminium arsenide laser therapy for temporomandibular disorder with myofascial pain: A systemic review and meta-analysisWu, Xuelian ; Zhu, Jiang ; Zheng, Bing ; Liu, Jie ; Wu, ZonghuiMedicine (Baltimore), 2021-12, Vol.100 (52), p.e28015-e28015 [Periódico revisado por pares]United States: Lippincott Williams & WilkinsTexto completo disponível |
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2 |
Material Type: Artigo
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Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenideTanaka, AkiyoToxicology and applied pharmacology, 2004-08, Vol.198 (3), p.405-411 [Periódico revisado por pares]San Diego, CA: Elsevier IncTexto completo disponível |
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3 |
Material Type: Artigo
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Design and study of nano-plasmonic couplers using aluminium arsenide and aluminaSaber, Md. Ghulam ; Sagor, Rakibul HasanIET optoelectronics, 2015-06, Vol.9 (3), p.125-130 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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4 |
Material Type: Artigo
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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substratesBaidus, N. V. ; Aleshkin, V. Ya ; Dubinov, A. A. ; Kudryavtsev, K. E. ; Nekorkin, S. M. ; Novikov, A. V. ; Pavlov, D. A. ; Rykov, A. V. ; Sushkov, A. A. ; Shaleev, M. V. ; Yunin, P. A. ; Yurasov, D. V. ; Yablonskiy, A. N. ; Krasilnik, Z. F.Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiationLiu, Shuo ; Dong, Jiawei ; Ma, Zhenyu ; Hu, Wenyu ; Deng, Yong ; Shi, Yuechun ; Wang, Xiaoyi ; Qiu, Yang ; Walther, ThomasJournal of microscopy (Oxford), 2024-03, Vol.293 (3), p.169-176 [Periódico revisado por pares]England: Wiley Subscription Services, IncTexto completo disponível |
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6 |
Material Type: Artigo
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Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowiresMancini, L. ; Fontana, Y. ; Conesa-Boj, S. ; Blum, I. ; Vurpillot, F. ; Francaviglia, L. ; Russo-Averchi, E. ; Heiss, M. ; Arbiol, J. ; Morral, A. Fontcuberta i ; Rigutti, L.Applied physics letters, 2014-12, Vol.105 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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Low-level gallium-aluminum-arsenide (GaAlAs) diode laser irradiation (λ 830 nm) associated with and without fluoridated gel in the prevention of enamel erosionSeefeldt, Vanessa Borelli ; Alvarenga, Marian Pereira ; Soares, Luís Eduardo SilvaLasers in dental science, 2020-09, Vol.4 (3), p.145-155Cham: Springer International PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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The aluminum arsenides AlmAsn (m + n = 2-5) and their anions : Structures, electron affinities and vibrational frequenciesGUO, L ; WU, H.-SThe European physical journal. D, Atomic, molecular, and optical physics, 2007-05, Vol.42 (2), p.259-267 [Periódico revisado por pares]Les Ulis: SpringerTexto completo disponível |
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9 |
Material Type: Artigo
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Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrateAleshkin, V. Ya ; Baidus, N. V. ; Dubinov, A. A. ; Fefelov, A. G. ; Krasilnik, Z. F. ; Kudryavtsev, K. E. ; Nekorkin, S. M. ; Novikov, A. V. ; Pavlov, D. A. ; Samartsev, I. V. ; Skorokhodov, E. V. ; Shaleev, M. V. ; Sushkov, A. A. ; Yablonskiy, A. N. ; Yunin, P. A. ; Yurasov, D. V.Applied physics letters, 2016-08, Vol.109 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxyDiNezza, Michael J. ; Zhao, Xin-Hao ; Liu, Shi ; Kirk, Alexander P. ; Zhang, Yong-HangApplied physics letters, 2013-11, Vol.103 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |