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Ammothermal Growth of GaN Substrates For LEDs: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting
Ammothermal Growth of GaN Substrates For LEDs: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting
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Archival Material / Manuscript 		Adicionar ao Meu Espaço

Ammothermal Growth of GaN Substrates For LEDs: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting

Soraa, Inc

United States. Department of Energy 2012

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  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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