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Ohmic contacts to Gallium Nitride materials
Ohmic contacts to Gallium Nitride materials
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Ohmic contacts to Gallium Nitride materials

Greco, Giuseppe ; Iucolano, Ferdinando ; Roccaforte, Fabrizio

Applied surface science, 2016-10, Vol.383, p.324-345 [Periódico revisado por pares]

Elsevier B.V

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2
Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers
Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers
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Homogeneous transparent conductive ZnO:Ga by ALD for large LED wafers

Szabó, Zoltán ; Baji, Zsófia ; Basa, Péter ; Czigány, Zsolt ; Bársony, István ; Wang, Hsin-Ying ; Volk, János

Applied surface science, 2016-08, Vol.379, p.304-308 [Periódico revisado por pares]

Elsevier B.V

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3
ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors
ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors
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ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors

So, Hongyun ; Senesky, Debbie G.

Applied surface science, 2016-11, Vol.387, p.280-284 [Periódico revisado por pares]

Elsevier B.V

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4
Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation
Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation
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Dependence of adhesion strength between GaN LEDs and sapphire substrate on power density of UV laser irradiation

Park, Junsu ; Sin, Young-Gwan ; Kim, Jae-Hyun ; Kim, Jaegu

Applied surface science, 2016-10, Vol.384, p.353-359 [Periódico revisado por pares]

Elsevier B.V

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5
Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit
Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit
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Structure and magnetism in Ga-rich MnGa/GaN thin films and unexpected giant perpendicular anisotropy in the ultra-thin film limit

Mandru, Andrada-Oana ; Corbett, Joseph P. ; Lucy, Jeremy M. ; Richard, Andrea L. ; Yang, Fengyuan ; Ingram, David C. ; Smith, Arthur R.

Applied surface science, 2016-03, Vol.367 (C), p.312-319 [Periódico revisado por pares]

Netherlands: Elsevier B.V

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6
Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
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Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour

Khir, Farah Liyana Muhammad ; Myers, Matthew ; Podolska, Anna ; Sanders, Tarun Maruthi ; Baker, Murray V. ; Nener, Brett D. ; Parish, Giacinta

Applied surface science, 2014-09, Vol.314, p.850-857 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes
Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes
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Anodic stripping voltammetry of silver(I) using unmodified GaN film and nanostructure electrodes

Liu, Q.Y. ; Liu, B.D. ; Yuan, F. ; Zhuang, H. ; Wang, C. ; Shi, D. ; Xu, Y.K. ; Jiang, X.

Applied surface science, 2015-11, Vol.356, p.1058-1063 [Periódico revisado por pares]

Elsevier B.V

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8
Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing
Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing
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Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing

So, Hongyun ; Hou, Minmin ; Jain, Sambhav R. ; Lim, Jongwoo ; Senesky, Debbie G.

Applied surface science, 2016-04, Vol.368, p.104-109 [Periódico revisado por pares]

Elsevier B.V

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9
Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes
Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes
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Effect of external tensile stress on blue InGaN/GaN multi-quantum-well light-emitting diodes

Tawfik, Wael Z. ; Song, Juhui ; Lee, Jung Ju ; Ha, Jun Seok ; Ryu, Sang-Wan ; Choi, Hee Seok ; Ryu, Bengso ; Lee, June Key

Applied surface science, 2013-10, Vol.283, p.727-731 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors
Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors
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Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Jiang, Ying ; Wang, Qingpeng ; Zhang, Fuzhe ; Li, Liuan ; Zhou, Deqiu ; Liu, Yang ; Wang, Dejun ; Ao, Jin-Ping

Applied surface science, 2015-10, Vol.351, p.1155-1160 [Periódico revisado por pares]

Elsevier B.V

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