Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Memristive FG-PVA Structures Fabricated with the Use of High Energy Xe Ion IrradiationIvanov, Artem I ; Antonova, Irina V ; Nebogatikova, Nadezhda A ; Olejniczak, AndrzejMaterials, 2022-03, Vol.15 (6), p.2085 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
|
2 |
Material Type: Artigo
|
Electrical Characterization of Emerging Transistor Technologies: Issues and ChallengesHaferlach, Max ; Pacheco, Anibal ; Sakalas, Paulius ; Alexandru, Mihaela ; Hermann, Sascha ; Nardmann, Tobias ; Schroter, Michael ; Claus, MartinIEEE transactions on nanotechnology, 2016-07, Vol.15 (4), p.619-626 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
3 |
Material Type: Artigo
|
On Local Sensing of Spin Hall Effect in Tungsten Films by Using STM-Based MeasurementsTing Xie ; Dreyer, Michael ; Bowen, David ; Hinkel, Dan ; Butera, R. E. ; Krafft, Charles ; Mayergoyz, IsaakIEEE transactions on nanotechnology, 2018-09, Vol.17 (5), p.914-919 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
4 |
Material Type: Artigo
|
Single Nanowire Optical CorrelatorYu, Huakang ; Fang, Wei ; Wu, Xiaoqin ; Lin, Xing ; Tong, Limin ; Liu, Weitao ; Wang, Aimin ; Shen, Y. RonNano letters, 2014-06, Vol.14 (6), p.3487-3490 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
|
5 |
Material Type: Artigo
|
Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) TransistorsIm, Ki-Sik ; Reddy, Mallem Siva Pratap ; Choi, Jinseok ; Hwang, Youngmin ; Roh, Jea-Seung ; An, Sung Jin ; Lee, Jung-HeeJournal of nanoscience and nanotechnology, 2020-07, Vol.20 (7), p.4282-428626650 The Old Road, Suite 208, Valencia, California 91381, USA: American Scientific PublishersSem texto completo |
|
6 |
Material Type: Artigo
|
Nanosecond Analog Programming of Substoichiometric Silicon Oxide Resistive RAMMontesi, Luca ; Buckwell, Mark ; Zarudnyi, Konstantin ; Garnett, Leon ; Hudziak, Steven ; Mehonic, Adnan ; Kenyon, Anthony J.IEEE transactions on nanotechnology, 2016-05, Vol.15 (3), p.428-434 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
7 |
Material Type: Artigo
|
Design and Implementation of a Facility for Discovering New Scintillator MaterialsDerenzo, S.E. ; Boswell, M.S. ; Bourret-Courchesne, E. ; Boutchko, R. ; Budinger, T.F. ; Canning, A. ; Hanrahan, S.M. ; Janecek, M. ; Qiyu Peng ; Porter-Chapman, Y. ; Powell, J.D. ; Ramsey, C.A. ; Taylor, S.E. ; Lin-Wang Wang ; Weber, M.J. ; Wilson, D.S.IEEE transactions on nuclear science, 2008-06, Vol.55 (3), p.1458-1463 [Periódico revisado por pares]New York: IEEETexto completo disponível |
|
8 |
Material Type: Artigo
|
Research on Time-Domain Transfer Impedance Measurement Technology for High Frequency Current Transformers in Partial Discharge Detection of CablesSong, Simeng ; Chen, Xiaoxin ; Qian, Yong ; Wang, Hui ; Zhang, Yue ; Sheng, Gehao ; Jiang, XiuchenShanghai jiao tong da xue xue bao, 2020-02, Vol.25 (1), p.10-17 [Periódico revisado por pares]Shanghai: Shanghai Jiaotong University PressTexto completo disponível |
|
9 |
Material Type: Artigo
|
High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap LayerIm, Ki-Sik ; Mallem, Siva Pratap Reddy ; Choi, Jin-Seok ; Hwang, Young-Min ; Roh, Jae-Seung ; An, Sung-Jin ; Lee, Jae-HoonNanomaterials (Basel, Switzerland), 2022-02, Vol.12 (4), p.643 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
|
10 |
Material Type: Artigo
|
Active properties of carbon nanotube field-effect transistors deduced from S parameters measurementsBethoux, J.-M. ; Happy, H. ; Siligaris, A. ; Dambrine, G. ; Borghetti, J. ; Derycke, V. ; Bourgoin, J.-P.IEEE transactions on nanotechnology, 2006-07, Vol.5 (4), p.335-342 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |