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Material Type: Artigo
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Publisher's Note: “Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser” [Appl. Phys. Lett. 104 , 242102 (2014)]Yun, J. ; Varlamov, S. ; Huang, J. ; Kim, K. ; Green, M. A.Applied physics letters, 2015-06, Vol.106 (25) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laserYun, J. ; Varlamov, S. ; Huang, J. ; Kim, K. ; Green, M. A.Applied physics letters, 2014-06, Vol.104 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Enhancing electron mobility in La-doped BaSnO{sub 3} thin films by thermal strain to annihilate extended defectsYu, Sangbae ; Yoon, Daseob ; Son, JunwooApplied physics letters, 2016-06, Vol.108 (26) [Periódico revisado por pares]United StatesTexto completo disponível |
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4 |
Material Type: Artigo
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Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodesZhang, Nan ; Hu, Yongsheng ; Lin, Jie ; Li, Yantao ; Liu, XingyuanApplied physics letters, 2016-08, Vol.109 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Observation of nanocrystalline diamond in diamondlike carbon films deposited at room temperature in electron cyclotron resonance plasmaZarrabian, M. ; Fourches-Coulon, N. ; Turban, G. ; Marhic, C. ; Lancin, M.Applied physics letters, 1997-05, Vol.70 (19), p.2535-2537 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Role of hydrogen in evolution of plasma parameters and dust growth in capacitively coupled dusty plasmasChai, K. B. ; Choe, Wonho ; Seon, C. R. ; Chung, C. W.Applied physics letters, 2010-11, Vol.97 (20) [Periódico revisado por pares]United StatesTexto completo disponível |
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7 |
Material Type: Artigo
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MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursorSeryogin, George ; Alema, Fikadu ; Valente, Nicholas ; Fu, Houqiang ; Steinbrunner, Erich ; Neal, Adam T. ; Mou, Shin ; Fine, Aaron ; Osinsky, AndreiApplied physics letters, 2020-12, Vol.117 (26) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Tunable rapid electron transport in titanium oxide thin filmsLi, Runze ; Yan, Faguang ; Deng, Yongcheng ; Shang, Yaxuan ; Sheng, YuApplied physics letters, 2023-01, Vol.122 (1) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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9 |
Material Type: Artigo
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High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperaturesNozawa, K. ; Ishiyama, T. ; Nishida, T. ; Saitoh, N. ; Yoshizawa, N. ; Suemasu, T. ; Toko, K.Applied physics letters, 2023-05, Vol.122 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor depositionRafique, Subrina ; Han, Lu ; Neal, Adam T. ; Mou, Shin ; Tadjer, Marko J. ; French, Roger H. ; Zhao, HongpingApplied physics letters, 2016-09, Vol.109 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |