Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
11 |
Material Type: Artigo
|
![]() |
Photo-detachment signal analysis to accurately determine electronegativity, electron temperature, and charged species densityOudini, N. ; Sirse, N. ; Taccogna, F. ; Ellingboe, A. R. ; Bendib, A.Applied physics letters, 2016-09, Vol.109 (12) [Periódico revisado por pares]Texto completo disponível |
12 |
Material Type: Artigo
|
![]() |
Electron temperature in a sodium–iodide lighting plasmaKarabourniotis, D. ; Drakakis, E.Applied physics letters, 2002-09, Vol.81 (11), p.1972-1974 [Periódico revisado por pares]Texto completo disponível |
13 |
Material Type: Artigo
|
![]() |
Publisher's Note: “Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser” [Appl. Phys. Lett. 104 , 242102 (2014)]Yun, J. ; Varlamov, S. ; Huang, J. ; Kim, K. ; Green, M. A.Applied physics letters, 2015-06, Vol.106 (25) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
14 |
Material Type: Artigo
|
![]() |
Measurement of electron temperature and density in an argon microdischarge by laser Thomson scatteringBelostotskiy, Sergey G. ; Khandelwal, Rahul ; Wang, Qiang ; Donnelly, Vincent M. ; Economou, Demetre J. ; Sadeghi, NaderApplied physics letters, 2008-06, Vol.92 (22), p.221507-221507-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
15 |
Material Type: Artigo
|
![]() |
Nitrogen in silicon for room temperature single-electron tunneling devicesYadav, Pooja ; Arora, Hemant ; Samanta, ArupApplied physics letters, 2023-02, Vol.122 (8) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
16 |
Material Type: Artigo
|
![]() |
High temperature electron spin relaxation in bulk GaAsOertel, S. ; Hübner, J. ; Oestreich, M.Applied physics letters, 2008-09, Vol.93 (13), p.132112-132112-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
17 |
Material Type: Artigo
|
![]() |
Electron temperature in electrically isolated Si double quantum dotsRossi, A. ; Ferrus, T. ; Williams, D. A.Applied physics letters, 2012-03, Vol.100 (13), p.133503-133503-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
18 |
Material Type: Artigo
|
![]() |
High temperature electron cyclotron resonance etching of GaN, InN, and AlNShul, R. J. ; Kilcoyne, S. P. ; Hagerott Crawford, M. ; Parmeter, J. E. ; Vartuli, C. B. ; Abernathy, C. R. ; Pearton, S. J.Applied physics letters, 1995-04, Vol.66 (14), p.1761-1763 [Periódico revisado por pares]Texto completo disponível |
19 |
Material Type: Artigo
|
![]() |
Low-temperature electron mobility in heavily n-doped junctionless nanowire transistorLi, Xiaoming ; Han, Weihua ; Wang, Hao ; Ma, Liuhong ; Zhang, Yanbo ; Du, Yandong ; Yang, FuhuaApplied physics letters, 2013-06, Vol.102 (22) [Periódico revisado por pares]Texto completo disponível |
20 |
Material Type: Artigo
|
![]() |
Long-lived, room-temperature electron spin coherence in colloidal CdS quantum dotsFeng, D. H. ; Li, X. ; Jia, T. Q. ; Pan, X. Q. ; Sun, Z. R. ; Xu, Z. Z.Applied physics letters, 2012-03, Vol.100 (12), p.122406-122406-4 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |