Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Analysis of radiation effects on individual DRAM cellsScheick, L.Z. ; Guertin, S.M. ; Swift, G.M.IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2534-2538 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Microdose Induced Data Loss on Floating Gate MemoriesGuertin, S.M. ; Nguyen, D.N. ; Patterson, J.D.IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3518-3524 [Periódico revisado por pares]Jet Propulsion Laboratory: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Radiation effects on advanced flash memoriesNguyen, D.N. ; Guertin, S.M. ; Swift, G.M. ; Johnston, A.H.IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1744-1750 [Periódico revisado por pares]United States: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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In-flight observations of multiple-bit upset in DRAMsSwift, G.M. ; Guertin, S.M.IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2386-2391 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Single-event upset in the PowerPC750 microprocessorSwift, G.M. ; Fannanesh, F.F. ; Guertin, S.M. ; Irom, F. ; Millward, D.G.IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.1822-1827 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Ion-induced stuck bits in 1T/1C SDRAM cellsEdmonds, L.D. ; Guertin, S.M. ; Scheick, L.Z. ; Nguyen, D. ; Swift, G.M.IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.1925-1930 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Erratum: Strange and multistrange particle production in Au+Au collisions at s N N = 62.4 GeV [Phys. Rev. C 83 , 024901 (2011)]Arkhipkin, D. ; Bellwied, R. ; Betancourt, M. J. ; Bouchet, J. ; Bruna, E. ; Bueltmann, S. ; Bunzarov, I. ; Cai, X. Z. ; Cebra, D. ; Chaloupka, P. ; Chattopadhyay, S. ; Cheng, J. ; Chikanian, A. ; Christie, W. ; Chung, P. ; Codrington, M. J. M. ; Debbe, R. R. ; Derevschikov, A. A. ; de Souza, R. Derradi ; Drachenberg, J. L. ; Draper, J. E. ; Efimov, L. G. ; Estienne, M. ; Fedorisin, J. ; Geromitsos, A. ; Geurts, F. ; Grebenyuk, O. ; Hajkova, O. ; Harris, J. W. ; Hays-Wehle, J. P. ; Huang, B. ; Judd, E. G. ; Kapitan, J. ; Knospe, A. G. ; Kollegger, T. ; Kouchpil, V. ; Krueger, K. ; Krus, M. ; Kumar, L. ; Lebedev, A. ; Li, X. ; Li, Z. M. ; Liu, F. ; Liu, H. ; Ljubicic, T. ; Lukashov, E. V. ; Ma, Y. G. ; Margetis, S. ; Masui, H. ; McShane, T. S. ; Meschanin, A. ; Milner, R. ; Munhoz, M. G. ; Naglis, M. ; Ng, M. J. ; Niida, T. ; Ohlson, A. ; Pachr, M. ; Pawlak, T. ; Plyku, D. ; Powell, C. B. ; Prindle, D. ; Putschke, J. ; Reed, R. ; Romero, J. L. ; Ruan, L. ; Sakai, S. ; Sakrejda, I. ; Salur, S. ; Schambach, J. ; Scharenberg, R. P. ; Schmah, A. M. ; Shahaliev, E. ; Shao, M. ; Simon, F. ; Speltz, J. ; Stringfellow, B. ; Suaide, A. A. P. ; Sun, Z. ; Tang, Z. ; Tarnowsky, T. ; Thein, D. ; Thomas, J. H. ; Tian, J. ; Trentalange, S. ; Van Buren, G. ; Varma, R. ; Wada, M. ; Webb, J. C. ; Whitten, C. ; Wieman, H. ; Witzke, W. ; Xie, W. ; Yepes, P. ; Yip, K. ; Yue, Q. ; Zbroszczyk, H. ; Zhang, Z. P. ; Zhao, J. ; Zoulkarneeva, Y.Physical review. C, 2023-04, Vol.107 (4), Article 049903 [Periódico revisado por pares]Texto completo disponível |
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8 |
Material Type: Ata de Congresso
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Heavy Ion Bit Response and Analysis of 256 Megabit Non-Volatile Spin-Torque-Transfer Magnetoresistive Random Access Memory (STT-MRAM)Katti, R. R. ; Guertin, S. M. ; Yang-Scharlotta, J. Y. ; Daniel, A. C. ; Some, R.2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018), 2018, p.1-4IEEESem texto completo |
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9 |
Material Type: Artigo
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Angular and energy dependence of proton upset in optocouplersJohnston, A.H. ; Miyahira, T. ; Swift, G.M. ; Guertin, S.M. ; Edmonds, L.D.IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1335-1341 [Periódico revisado por pares]United States: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Angular dependence of DRAM upset susceptibility and implications for testing and analysisGuertin, S.M. ; Edmonds, L.D. ; Swift, G.M.IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2380-2385 [Periódico revisado por pares]New York: IEEETexto completo disponível |