Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors ApplicationLi, Chen ; Lin, Hongxiao ; Li, Junjie ; Yin, Xiaogen ; Zhang, Yongkui ; Kong, Zhenzhen ; Wang, Guilei ; Zhu, Huilong ; Radamson, Henry H.Nanoscale research letters, 2020-12, Vol.15 (1), p.225-225, Article 225 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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2 |
Material Type: Artigo
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Complementary etching behavior of alkali, metal‐catalyzed chemical, and post‐etching of multicrystalline silicon wafersZou, Shuai ; Ye, Xiaoya ; Wu, Chengkun ; Cheng, Kexun ; Fang, Liang ; Tang, Rujun ; Shen, Mingrong ; Wang, Xusheng ; Su, XiaodongProgress in photovoltaics, 2019-06, Vol.27 (6), p.511-519 [Periódico revisado por pares]Bognor Regis: Wiley Subscription Services, IncTexto completo disponível |
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3 |
Material Type: Artigo
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Etching methods for texturing industrial multi-crystalline silicon wafers: A comprehensive reviewSreejith, K.P. ; Sharma, Ashok Kumar ; Basu, Prabir Kanti ; Kottantharayil, AnilSolar energy materials and solar cells, 2022-05, Vol.238, p.111531, Article 111531 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Metal‐Assisted Chemical Etching of Silicon in Oxidizing HF Solutions: Origin, Mechanism, Development, and Black Silicon Solar Cell ApplicationHuo, Chenliang ; Wang, Jiang ; Fu, Haoxin ; Li, Xianlun ; Yang, Yi ; Wang, Hui ; Mateen, Abdul ; Farid, Ghulam ; Peng, Kui‐QingAdvanced functional materials, 2020-12, Vol.30 (52), p.n/a [Periódico revisado por pares]Hoboken: Wiley Subscription Services, IncTexto completo disponível |
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5 |
Material Type: Artigo
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Damage and residual layer analysis of reactive ion etching textured multi-crystalline silicon wafer for application to solar cellsKang, Dongkyun ; Park, HyunJung ; Choi, Dongjin ; Han, Hyebin ; Seol, Jaeseung ; Kang, Yoonmook ; Lee, Hae-Seok ; Kim, DonghwanSolar energy, 2022-02, Vol.233, p.111-117 [Periódico revisado por pares]New York: Elsevier LtdTexto completo disponível |
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6 |
Material Type: Artigo
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Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substratesBruno, A. ; de Lange, G. ; Asaad, S. ; van der Enden, K. L. ; Langford, N. K. ; DiCarlo, L.Applied physics letters, 2015-05, Vol.106 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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7 |
Material Type: Artigo
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In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside siliconTokel, Onur ; Turnali, Ahmet ; Makey, Ghaith ; Elahi, Parviz ; Çolakoğlu, Tahir ; Ergeçen, Emre ; Yavuz, Özgün ; Hübner, René ; Borra, Mona Zolfaghari ; Pavlov, Ihor ; Bek, Alpan ; Turan, Raşit ; Kesim, Denizhan Koray ; Tozburun, Serhat ; Ilday, Serim ; Ilday, F ÖmerNature photonics, 2017-10, Vol.11 (10), p.639-645 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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8 |
Material Type: Artigo
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Metal-Assisted Chemical Etching of Silicon: A ReviewHuang, Zhipeng ; Geyer, Nadine ; Werner, Peter ; de Boor, Johannes ; Gösele, UlrichAdvanced materials (Weinheim), 2011-01, Vol.23 (2), p.285-308 [Periódico revisado por pares]Weinheim: WILEY-VCH VerlagTexto completo disponível |
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9 |
Material Type: Artigo
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A MACEing silicon: Towards single-step etching of defined porous nanostructures for biomedicineAlhmoud, Hashim ; Brodoceanu, Daniel ; Elnathan, Roey ; Kraus, Tobias ; Voelcker, Nicolas H.Progress in materials science, 2021-02, Vol.116, p.100636, Article 100636 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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10 |
Material Type: Artigo
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Chemical vapor deposition of layered two-dimensional MoSi2N4 materialsHong, Yi-Lun ; Liu, Zhibo ; Wang, Lei ; Zhou, Tianya ; Ma, Wei ; Xu, Chuan ; Feng, Shun ; Chen, Long ; Chen, Mao-Lin ; Sun, Dong-Ming ; Chen, Xing-Qiu ; Cheng, Hui-Ming ; Ren, WencaiScience (American Association for the Advancement of Science), 2020-08, Vol.369 (6504), p.670-674 [Periódico revisado por pares]Washington: The American Association for the Advancement of ScienceTexto completo disponível |