Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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Study on Wet Chemical Etching of Flexible Printed Circuit Board with 16-μm Line PitchTang, Yinggang ; Li, Hui ; Sheng, Jiazheng ; Sun, Bin ; Wang, Jian ; Zhang, Chupeng ; Zhang, Daode ; Huang, YicangJournal of electronic materials, 2023-06, Vol.52 (6), p.4030-4036 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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2 |
Material Type: Artigo
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Modified inductively coupled plasma reactive ion etch process for high aspect ratio etching of fused silica, borosilicate and aluminosilicate glass substratesZhang, Chenchen ; Tadigadapa, SrinivasSensors and actuators. A. Physical., 2018-04, Vol.273, p.147-158 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Fabrication of Novel MEMS Microgrippers by Deep Reactive Ion Etching With Metal Hard MaskBagolini, Alvise ; Ronchin, Sabina ; Bellutti, Pierluigi ; Chiste, Matteo ; Verotti, Matteo ; Belfiore, Nicola PioJournal of microelectromechanical systems, 2017-08, Vol.26 (4), p.926-934 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Metal-Assisted Chemical Etching Toward Scallop-Free-Sidewall Through-Silicon Vias: A ReviewHwang, Sunghyun ; Lee, Woosol ; Carr, William N. ; Yoon, Yong-KyuIEEE transactions on components, packaging, and manufacturing technology (2011), 2023-11, Vol.13 (11), p.1848-1860 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Ultra Deep Reactive Ion Etching of High Aspect-Ratio and Thick Silicon Using a Ramped-Parameter ProcessTang, Yemin ; Sandoughsaz, Amin ; Owen, Kevin J. ; Najafi, KhalilJournal of microelectromechanical systems, 2018-08, Vol.27 (4), p.686-697 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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In-plane silicon microneedles with open capillary microfluidic networks by deep reactive ion etching and sacrificial layer based sharpeningLi, Yan ; Zhang, Hang ; Yang, Ruifeng ; Tazrin, Fahima ; Zhu, Chenxu ; Kaddoura, Moufeed ; Blondeel, Eric J.M. ; Cui, BoSensors and actuators. A. Physical., 2019-06, Vol.292, p.149-157 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE, and Fs-Laser EtchingLiu, Xiaolong ; Radfar, Behrad ; Chen, Kexun ; Setala, Olli E. ; Pasanen, Toni P. ; Yli-Koski, Marko ; Savin, Hele ; Vahanissi, VilleIEEE transactions on semiconductor manufacturing, 2022-08, Vol.35 (3), p.504-510 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and SolutionHemanjaneyulu, Kuruva ; Meersha, Adil ; Kumar, Jeevesh ; Shrivastava, MayankIEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1956-1963 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length VariationYin, Xiaogen ; Yang, H. ; Xie, L. ; Ai, X. Z. ; Zhang, Y. B. ; Jia, K. P. ; Wu, Z. H. ; Ma, X. L. ; Zhang, Q. Z. ; Mao, S. J. ; Xiang, J. J. ; Zhang, Yongkui ; Gao, J. F. ; He, X. B. ; Bai, G. B. ; Lu, Y. H. ; Zhou, N. ; Kong, Z. Z. ; Zhang, Y. ; Zhao, J. ; Ma, S. S. ; Xuan, Z. H. ; Zhu, Huilong ; Li, Y. Y. ; Li, L. ; Zhang, Q. H. ; Han, J. H. ; Chen, R. L. ; Qu, Y. ; Yang, T. ; Luo, J. ; Li, J. F. ; Yin, H. X. ; Wang, G. L. ; Radamson, H. ; Zhao, C. ; Wang, W. W. ; Ye, T. C. ; Li, J. J. ; Du, A.Y. ; Li, C. ; Zhao, L. H. ; Huang, W. X.IEEE electron device letters, 2020-01, Vol.41 (1), p.8-11 [Periódico revisado por pares]IEEETexto completo disponível |
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10 |
Material Type: Artigo
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Effect of cations on silicon anisotropic etching process in solutions containing TMAH and TMAH with tensioactive compoundsZubel, IrenaSensors and actuators. A. Physical., 2020-03, Vol.303, p.111829, Article 111829 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |